Inventor
LIN CHIH-YU
TW98 patents
⚠️ This page may combine multiple inventors who share the name “LIN CHIH-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
42 patentsUS10650882B2May 12, 2020
Static random access memory with a supplementary driver circuit and method of controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US11074966B2Jul 27, 2021
Method and system to balance ground bounce
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11018142B2May 25, 2021
Memory cell and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10734066B2Aug 4, 2020
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10411019B2Sep 10, 2019
SRAM cell word line structure with reduced RC effects
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10153035B2Dec 11, 2018
SRAM-based authentication circuit
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9524920B2Dec 20, 2016
Apparatus and method of three dimensional conductive lines
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9449661B2Sep 20, 2016
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US12029023B2Jul 2, 2024
Memory array circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11657870B2May 23, 2023
Method and system to balance ground bounce
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11637108B2Apr 25, 2023
Memory array circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11569246B2Jan 31, 2023
Four CPP wide memory cell with buried power grid, and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11196574B2Dec 7, 2021
Physically unclonable function (PUF) generation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10950298B1Mar 16, 2021
Mixed threshold voltage memory array
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10783954B2Sep 22, 2020
Semiconductor memory with respective power voltages for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10770134B2Sep 8, 2020
SRAM based authentication circuit
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10714181B2Jul 14, 2020
Memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10672776B2Jun 2, 2020
Memory circuit having resistive device coupled with supply voltage line
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10651114B2May 12, 2020
Apparatus and method of three dimensional conductive lines
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10431295B2Oct 1, 2019
Static random access memory and method of controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10373964B2Aug 6, 2019
Method of writing to memory circuit using resistive device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10163759B2Dec 25, 2018
Apparatus and method of three dimensional conductive lines
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9865605B2Jan 9, 2018
Memory circuit having resistive device coupled with supply voltage line
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11404113B2Aug 2, 2022
Memory device including a word line with portions with different sizes in different metal layers
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US12408316B2Sep 2, 2025
Memory array circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12245412B2Mar 4, 2025
SRAM cell word line structure with reduced RC effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12176026B2Dec 24, 2024
Static random access memory with a supplementary driver circuit and method of controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11778802B2Oct 3, 2023
SRAM cell word line structure with reduced RC effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11676660B2Jun 13, 2023
Static random access memory with a supplementary driver circuit and method of controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11574674B2Feb 7, 2023
SRAM based authentication circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11264088B2Mar 1, 2022
Semiconductor memory with respective power voltages for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11205475B2Dec 21, 2021
Static random access memory with a supplementary driver circuit and method of controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11024633B2Jun 1, 2021
SRAM cell word line structure with reduced RC effects
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9142275B2Sep 22, 2015
Wordline tracking for boosted-wordline timing scheme
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12586635B2Mar 24, 2026
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12387768B2Aug 12, 2025
Memory device including separate negative bit line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369292B2Jul 22, 2025
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12367929B2Jul 22, 2025
Memory device having a negative voltage circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12260903B2Mar 25, 2025
Memory devices with improved bit line loading
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12137548B2Nov 5, 2024
Four CPP wide memory cell with buried power grid, and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12100436B2Sep 24, 2024
Method and system to balance ground bounce
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074156B2Aug 27, 2024
Memory array circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
TAIWAN SEMICONDUCTOR MFG
2 patentsINST INFORMATION INDUSTRY
1 patentCHEN YEN-HUEI
1 patentLIN CHIH-YU
1 patentIND TECH RES INST
1 patentSENSORTEK TECH CORP
1 patentSITRONIX TECHNOLOGY CORP
1 patentShowing the top 50 of 98 patents by PatentIndex Score.