Inventor
LIAO HUNG-JEN
TW234 patents
⚠️ This page may combine multiple inventors who share the name “LIAO HUNG-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
28 patentsUS9183341B2Nov 10, 2015
Pre-colored methodology of multiple patterning
TAIWAN SEMICONDUCTOR MFG CO LTD24 citations93
US9824729B2Nov 21, 2017
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations92
US11423974B2Aug 23, 2022
Method of forming semiconductor device including distributed write driving arrangement
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11199866B2Dec 14, 2021
Voltage regulator with power rail tracking
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11018142B2May 25, 2021
Memory cell and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10991420B2Apr 27, 2021
Semiconductor device including distributed write driving arrangement and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10839894B2Nov 17, 2020
Memory computation circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10803928B2Oct 13, 2020
Low voltage memory device
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10755768B2Aug 25, 2020
Semiconductor device including distributed write driving arrangement and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10734066B2Aug 4, 2020
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10651832B2May 12, 2020
Level shifter
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10559333B2Feb 11, 2020
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10541007B2Jan 21, 2020
Memory device with strap cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10503421B2Dec 10, 2019
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10411019B2Sep 10, 2019
SRAM cell word line structure with reduced RC effects
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10319421B2Jun 11, 2019
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10204660B2Feb 12, 2019
Memory device with strap cells
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10176864B2Jan 8, 2019
Static random access memory circuits
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9997219B2Jun 12, 2018
Memory macro and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9922700B2Mar 20, 2018
Memory read stability enhancement with short segmented bit line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9886996B2Feb 6, 2018
SRAM cell for interleaved wordline scheme
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9842627B2Dec 12, 2017
Memory device with strap cells
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9704565B2Jul 11, 2017
Method of using a static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9601162B1Mar 21, 2017
Memory devices with strap cells
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9412742B2Aug 9, 2016
Layout design for manufacturing a memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9093176B2Jul 28, 2015
Power line lowering for write assisted control scheme
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9075936B2Jul 7, 2015
Pre-colored methodology of multiple patterning
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9281031B2Mar 8, 2016
Method and apparatus for read assist to compensate for weak bit
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
TAIWAN SEMICONDUCTOR MFG
14 patentsUS9257172B2Feb 9, 2016
Multi-port memory cell
TAIWAN SEMICONDUCTOR MFG14 citations93
US7502277B2Mar 10, 2009
Word-line driver design for pseudo two-port memories
TAIWAN SEMICONDUCTOR MFG20 citations93
US5995433ANov 30, 1999
Three-transistor type DRAM with a refresh circuit
TAIWAN SEMICONDUCTOR MFG35 citations93
US5546019AAug 13, 1996
CMOS I/O circuit with 3.3 volt output and tolerance of 5 volt input
TAIWAN SEMICONDUCTOR MFG56 citations93
US7701755B2Apr 20, 2010
Memory having improved power design
TAIWAN SEMICONDUCTOR MFG41 citations92
US7215587B2May 8, 2007
Tracking circuit for a memory device
TAIWAN SEMICONDUCTOR MFG21 citations92
US9281056B2Mar 8, 2016
Static random access memory and method of using the same
TAIWAN SEMICONDUCTOR MFG5 citations84
US7952911B2May 31, 2011
SRAM cell array structure
TAIWAN SEMICONDUCTOR MFG10 citations84
US7808812B2Oct 5, 2010
Robust 8T SRAM cell
TAIWAN SEMICONDUCTOR MFG12 citations84
US7505345B2Mar 17, 2009
Circuit and method for an SRAM with two phase word line pulse
TAIWAN SEMICONDUCTOR MFG17 citations84
US7436696B2Oct 14, 2008
Read-preferred SRAM cell design
TAIWAN SEMICONDUCTOR MFG12 citations84
US7313050B2Dec 25, 2007
Word-line driver for memory devices
TAIWAN SEMICONDUCTOR MFG17 citations84
US7271644B2Sep 18, 2007
Multi-state electrical fuse
TAIWAN SEMICONDUCTOR MFG14 citations84
US7468903B2Dec 23, 2008
Circuits for improving read and write margins in multi-port SRAMS
TAIWAN SEMICONDUCTOR MFG18 citations83
LEE CHENG HUNG
2 patentsLIN TZU-KUEI
2 patentsCHEN YEN-HUEI
1 patentCHANG JONATHAN TSUNG-YUNG
1 patentLIN CHIH-YU
1 patentCHEN JUNG-HSUAN
1 patentShowing the top 50 of 234 patents by PatentIndex Score.