P

Inventor

TERLETZKI HARTMUD

US21 patents
⚠️ This page may combine multiple inventors who share the name “TERLETZKI HARTMUD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

14 patents
US6853233B1Feb 8, 2005

Level-shifting circuitry having “high” output impedance during disable mode

INFINEON TECHNOLOGIES AG14 citations84
US6501298B1Dec 31, 2002

Level-shifting circuitry having “low” output during disable mode

INFINEON TECHNOLOGIES AG16 citations84
US6730989B1May 4, 2004

Semiconductor package and method

INFINEON TECHNOLOGIES AG13 citations82
US6608783B2Aug 19, 2003

Twisted bit-line compensation

INFINEON TECHNOLOGIES AG11 citations74
US7173473B2Feb 6, 2007

Level-shifting circuitry having “high” output impedance during disable mode

INFINEON TECHNOLOGIES AG5 citations63
US6400650B1Jun 4, 2002

Pulse width detection

INFINEON TECHNOLOGIES AG2 citations63
US6324125B1Nov 27, 2001

Pulse width detection

INFINEON TECHNOLOGIES AG3 citations63
US10068897B2Sep 4, 2018

Shallow trench isolation area having buried capacitor

INFINEON TECHNOLOGIES AG1 citations62
US6930930B2Aug 16, 2005

Using isolated p-well transistor arrangements to avoid leakage caused by word line/bit line shorts

INFINEON TECHNOLOGIES AG2 citations62
US6459300B1Oct 1, 2002

Level-shifting circuitry having “high” output during disable mode

INFINEON TECHNOLOGIES AG6 citations62
US7060529B2Jun 13, 2006

Multiple chip semiconductor arrangement having electrical components in separating regions

INFINEON TECHNOLOGIES AG2 citations61
US9536872B2Jan 3, 2017

Shallow trench isolation area having buried capacitor

INFINEON TECHNOLOGIES AG0 citations52
US6958626B2Oct 25, 2005

Off chip driver

INFINEON TECHNOLOGIES AG6 citations52
US6815803B1Nov 9, 2004

Multiple chip semiconductor arrangement having electrical components in separating regions

INFINEON TECHNOLOGIES AG1 citations51

SIEMENS AG

6 patents

TERLETZKI HARTMUD

1 patent