Inventor
CHOY JON SCOTT
US24 patents
⚠️ This page may combine multiple inventors who share the name “CHOY JON SCOTT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NXP USA INC
21 patentsUS11049539B1Jun 29, 2021
Magnetoresistive random access memory (MRAM) with OTP cells
NXP USA INC11 citations85
US10861524B1Dec 8, 2020
Magnetoresistive random access memory (MRAM) with OTP cells
NXP USA INC14 citations85
US10796741B1Oct 6, 2020
Non-volatile memory with a select gate regulator circuit
NXP USA INC8 citations83
US10295572B1May 21, 2019
Voltage sampling switch
NXP USA INC9 citations82
US10224088B1Mar 5, 2019
Memory with a global reference circuit
NXP USA INC10 citations82
US11521692B2Dec 6, 2022
Memory with one-time programmable (OTP) cells and reading operations thereof
NXP USA INC6 citations73
US11742012B2Aug 29, 2023
Memory read circuitry with a flipped voltage follower
NXP USA INC2 citations72
US11328784B2May 10, 2022
Memory with cells having multiple select transistors
NXP USA INC3 citations72
US11289144B1Mar 29, 2022
Non-volatile memory with virtual ground voltage provided to unselected column lines during memory write operation
NXP USA INC2 citations72
US11250898B2Feb 15, 2022
Non-volatile memory with multiplexer transistor regulator circuit
NXP USA INC2 citations72
US11145382B1Oct 12, 2021
Non-volatile memory with a well bias generation circuit
NXP USA INC4 citations72
US10984846B2Apr 20, 2021
Reference generation for voltage sensing in a resistive memory
NXP USA INC1 citations61
US11056160B2Jul 6, 2021
Non-volatile memory with selectable hard write
NXP USA INC0 citations58
US12224024B2Feb 11, 2025
Memory with one-time programmable (OTP) cells
NXP USA INC0 citations52
US11404118B1Aug 2, 2022
Memory with sense amplifiers
NXP USA INC0 citations52
US11348628B2May 31, 2022
Non-volatle memory with virtual ground voltage provided to unselected column lines during memory read operation
NXP USA INC0 citations51
US11170849B1Nov 9, 2021
Memory with select line voltage control
NXP USA INC0 citations51
US12051476B2Jul 30, 2024
Testing disruptive memories
NXP USA INC0 citations47
US11521665B2Dec 6, 2022
Non-volatile memory having write detect circuitry
NXP USA INC0 citations47
US12094510B2Sep 17, 2024
Magnetoresistive random access memory (MRAM) with end of life margin sensor
NXP USA INC0 citations46
US11989417B1May 21, 2024
Column repair in a memory system using a repair cache
NXP USA INC0 citations41