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Inventor

CHOY JON SCOTT

US24 patents
⚠️ This page may combine multiple inventors who share the name “CHOY JON SCOTT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NXP USA INC

21 patents
US11049539B1Jun 29, 2021

Magnetoresistive random access memory (MRAM) with OTP cells

NXP USA INC11 citations85
US10861524B1Dec 8, 2020

Magnetoresistive random access memory (MRAM) with OTP cells

NXP USA INC14 citations85
US10796741B1Oct 6, 2020

Non-volatile memory with a select gate regulator circuit

NXP USA INC8 citations83
US10295572B1May 21, 2019

Voltage sampling switch

NXP USA INC9 citations82
US10224088B1Mar 5, 2019

Memory with a global reference circuit

NXP USA INC10 citations82
US11521692B2Dec 6, 2022

Memory with one-time programmable (OTP) cells and reading operations thereof

NXP USA INC6 citations73
US11742012B2Aug 29, 2023

Memory read circuitry with a flipped voltage follower

NXP USA INC2 citations72
US11328784B2May 10, 2022

Memory with cells having multiple select transistors

NXP USA INC3 citations72
US11289144B1Mar 29, 2022

Non-volatile memory with virtual ground voltage provided to unselected column lines during memory write operation

NXP USA INC2 citations72
US11250898B2Feb 15, 2022

Non-volatile memory with multiplexer transistor regulator circuit

NXP USA INC2 citations72
US11145382B1Oct 12, 2021

Non-volatile memory with a well bias generation circuit

NXP USA INC4 citations72
US10984846B2Apr 20, 2021

Reference generation for voltage sensing in a resistive memory

NXP USA INC1 citations61
US11056160B2Jul 6, 2021

Non-volatile memory with selectable hard write

NXP USA INC0 citations58
US12224024B2Feb 11, 2025

Memory with one-time programmable (OTP) cells

NXP USA INC0 citations52
US11404118B1Aug 2, 2022

Memory with sense amplifiers

NXP USA INC0 citations52
US11348628B2May 31, 2022

Non-volatle memory with virtual ground voltage provided to unselected column lines during memory read operation

NXP USA INC0 citations51
US11170849B1Nov 9, 2021

Memory with select line voltage control

NXP USA INC0 citations51
US12051476B2Jul 30, 2024

Testing disruptive memories

NXP USA INC0 citations47
US11521665B2Dec 6, 2022

Non-volatile memory having write detect circuitry

NXP USA INC0 citations47
US12094510B2Sep 17, 2024

Magnetoresistive random access memory (MRAM) with end of life margin sensor

NXP USA INC0 citations46
US11989417B1May 21, 2024

Column repair in a memory system using a repair cache

NXP USA INC0 citations41

FREESCALE SEMICONDUCTOR INC

2 patents

NXP BV

1 patent