Inventor

CHEN JINYUAN

US12 patents

⚠️ This page may combine multiple inventors who share the name “CHEN JINYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO FAB EQUIP INC

2 patents

US7503996B2Mar 17, 2009

Multiple frequency plasma chamber, switchable RF system, and processes using same

ADVANCED MICRO FAB EQUIP INC33 citations92

US8366829B2Feb 5, 2013

Multi-station decoupled reactive ion etch chamber

ADVANCED MICRO FAB EQUIP INC10 citations83

YIN GERALD

2 patents

US8297225B2Oct 30, 2012

Capacitive CVD reactor and methods for plasma CVD process

YIN GERALD6 citations70

US9208998B2Dec 8, 2015

Multi-station decoupled reactive ion etch chamber

YIN GERALD0 citations48

(unassigned)

1 patent

US5564085AOct 8, 1996

Cellular telephone RF radiation ameliorating device

30 citations89

CHEN AIHUA

1 patent

US8336488B2Dec 25, 2012

Multi-station plasma reactor with multiple plasma regions

CHEN AIHUA11 citations83

NI TUQIANG

1 patent

US8111499B2Feb 7, 2012

System and method of sensing and removing residual charge from a processed wafer

NI TUQIANG13 citations80

NI TOM

1 patent

US8608851B2Dec 17, 2013

Plasma confinement apparatus, and method for confining a plasma

NI TOM7 citations76

PEARL KOGYO CO LTD

1 patent

US10201069B2Feb 5, 2019

High frequency power supply device and high frequency power supplying method

PEARL KOGYO CO LTD1 citations58

ADVANCED MICRO FABRICATION EQUIPMENT INC CHINA

1 patent

US10187965B2Jan 22, 2019

Plasma confinement apparatus, and method for confining a plasma

ADVANCED MICRO FABRICATION EQUIPMENT INC CHINA0 citations50

UNIV PEKING FOUNDER GROUP CO

1 patent

US8975194B2Mar 10, 2015

Method for manufacturing oxide layer

UNIV PEKING FOUNDER GROUP CO0 citations40

CHEN JINYUAN

1 patent

US9271384B2Feb 23, 2016

Plasma processing apparatus

CHEN JINYUAN0 citations39