Inventor
KUAN SHU
TW13 patents
⚠️ This page may combine multiple inventors who share the name “KUAN SHU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS10510889B2Dec 17, 2019
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations92
US12148794B2Nov 19, 2024
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12119394B2Oct 15, 2024
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11393898B2Jul 19, 2022
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11367784B2Jun 21, 2022
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12389638B2Aug 12, 2025
Method of forming fully strained channels
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12021143B2Jun 25, 2024
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817499B2Nov 14, 2023
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670681B2Jun 6, 2023
Method of forming fully strained channels
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11404574B2Aug 2, 2022
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10930781B2Feb 23, 2021
P-type strained channel in a fin field effect transistor (FinFET) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US9917189B2Mar 13, 2018
Method for detecting presence and location of defects in a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51