Inventor

PRITISKUTCH JOHN C

US6 patents

⚠️ This page may combine multiple inventors who share the name “PRITISKUTCH JOHN C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ST MICROELECTRONICS INC

4 patents

US9673103B2Jun 6, 2017

MOSFET devices with asymmetric structural configurations introducing different electrical characteristics

ST MICROELECTRONICS INC3 citations65

US8980747B2Mar 17, 2015

Method and system for pre-migration of metal ions in a semiconductor package

ST MICROELECTRONICS INC0 citations48

US9837320B2Dec 5, 2017

MOSFET devices with asymmetric structural configurations introducing different electrical characteristics

ST MICROELECTRONICS INC1 citations44

US9018765B2Apr 28, 2015

Preventing shorting dendritic migration between electrodes

ST MICROELECTRONICS INC0 citations43

ROTAY CRAIG J

1 patent

US8557703B2Oct 15, 2013

Method for pre-migration of metal ions in a semiconductor package

ROTAY CRAIG J0 citations48

PRITISKUTCH JOHN C

1 patent

US8803599B2Aug 12, 2014

Dendrite resistant input bias network for metal oxide semiconductor field effect transistor (MOSFET) devices

PRITISKUTCH JOHN C0 citations39