Inventor
JIN MINGHAO
AT6 patents
⚠️ This page may combine multiple inventors who share the name “JIN MINGHAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA AG
5 patentsUS9443973B2Sep 13, 2016
Semiconductor device with charge compensation region underneath gate trench
INFINEON TECHNOLOGIES AUSTRIA AG6 citations83
US9425788B1Aug 23, 2016
Current sensors and methods of improving accuracy thereof
INFINEON TECHNOLOGIES AUSTRIA AG9 citations78
US9496339B2Nov 15, 2016
Semiconductor device comprising trench structures
INFINEON TECHNOLOGIES AUSTRIA AG2 citations60
US10199456B2Feb 5, 2019
Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US9478639B2Oct 25, 2016
Electrode-aligned selective epitaxy method for vertical power devices
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50