Inventor
KU SHAW-HUNG
TW22 patents
⚠️ This page may combine multiple inventors who share the name “KU SHAW-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
20 patentsUS9589982B1Mar 7, 2017
Structure and method of operation for improved gate capacity for 3D NOR flash memory
MACRONIX INT CO LTD215 citations98
US7301818B2Nov 27, 2007
Hole annealing methods of non-volatile memory cells
MACRONIX INT CO LTD24 citations92
US10644018B2May 5, 2020
3D memory having plural lower select gates
MACRONIX INT CO LTD9 citations83
US7889556B2Feb 15, 2011
Flash memory having insulating liners between source/drain lines and channels
MACRONIX INT CO LTD7 citations82
US11037632B1Jun 15, 2021
Multi-tier 3D memory and erase method thereof
MACRONIX INT CO LTD3 citations73
US9859007B2Jan 2, 2018
Non-volatile memory device having multiple string select lines
MACRONIX INT CO LTD6 citations73
US11062759B1Jul 13, 2021
Memory device and programming method thereof
MACRONIX INT CO LTD3 citations72
US10796753B1Oct 6, 2020
Method and system to determine quick pass write operation in increment step pulse programming operation
MACRONIX INT CO LTD2 citations72
US9548121B2Jan 17, 2017
Memory device having only the top poly cut
MACRONIX INT CO LTD2 citations72
US9437612B1Sep 6, 2016
Three-dimensional memory
MACRONIX INT CO LTD3 citations72
US7668010B2Feb 23, 2010
Flash memory having insulating liners between source/drain lines and channels
MACRONIX INT CO LTD7 citations72
US11201169B2Dec 14, 2021
Memory device and method of fabricating the same
MACRONIX INT CO LTD1 citations62
US10460797B2Oct 29, 2019
Method for programming non-volatile memory and memory system
MACRONIX INT CO LTD1 citations62
US10340017B2Jul 2, 2019
Erase-verify method for three-dimensional memories and memory system
MACRONIX INT CO LTD1 citations62
US9524784B1Dec 20, 2016
Device and method for improved threshold voltage distribution for non-volatile memory
MACRONIX INT CO LTD2 citations62
US11361824B1Jun 14, 2022
Memory device and operation method thereof
MACRONIX INT CO LTD0 citations61
US7971177B2Jun 28, 2011
Design tool for charge trapping memory using simulated programming operations
MACRONIX INT CO LTD0 citations52
US9620603B2Apr 11, 2017
Semiconductor device with a P-N junction for reduced charge leakage and method of manufacturing the same
MACRONIX INT CO LTD0 citations51
US7439085B2Oct 21, 2008
Method and apparatus for electroluminescence
MACRONIX INT CO LTD0 citations50
US8859364B2Oct 14, 2014
Manufacturing method of non-volatile memory
MACRONIX INT CO LTD0 citations49