Inventor
LIN TA-WEI
TW42 patents
⚠️ This page may combine multiple inventors who share the name “LIN TA-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS10516029B2Dec 24, 2019
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10340357B2Jul 2, 2019
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10950708B2Mar 16, 2021
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11823959B2Nov 21, 2023
FUSI gated device formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11133226B2Sep 28, 2021
FUSI gated device formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10388531B2Aug 20, 2019
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11527531B2Dec 13, 2022
Recessed gate for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12439679B2Oct 7, 2025
FUSI gated device formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12142488B2Nov 12, 2024
Dishing prevention structure embedded in a gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11569363B2Jan 31, 2023
Dishing prevention dummy structures for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532486B2Dec 20, 2022
Dishing prevention structure embedded in a gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11152222B2Oct 19, 2021
Dishing prevention structure embedded in a gate electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094545B2Aug 17, 2021
Self-aligned insulated film for high-K metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12439643B2Oct 7, 2025
Fin shape modification
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12363998B2Jul 15, 2025
Recessed gate for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11948938B2Apr 2, 2024
Recessed gate for an MV device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11626398B2Apr 11, 2023
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12520559B2Jan 6, 2026
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US10170334B2Jan 1, 2019
Reduction of dishing during chemical mechanical polish of gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9779947B2Oct 3, 2017
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12310093B2May 20, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
OPUS MICROSYSTEMS CORP
4 patentsUS7972014B2Jul 5, 2011
Scanning projection apparatus with phase detection and compensation
OPUS MICROSYSTEMS CORP19 citations82
US7990620B2Aug 2, 2011
Head-up display system
OPUS MICROSYSTEMS CORP3 citations60
US10680535B2Jun 9, 2020
Comb-drive actuator
OPUS MICROSYSTEMS CORP0 citations39
US9219219B2Dec 22, 2015
Oscillation structure of micro actuator
OPUS MICROSYSTEMS CORP0 citations33
MACRONIX INT CO LTD
4 patentsUS10460797B2Oct 29, 2019
Method for programming non-volatile memory and memory system
MACRONIX INT CO LTD1 citations62
US7893475B2Feb 22, 2011
Dynamic random access memory cell and manufacturing method thereof
MACRONIX INT CO LTD0 citations52
US7750368B2Jul 6, 2010
Memory device
MACRONIX INT CO LTD0 citations52
US7754544B2Jul 13, 2010
Dynamic random access memory cell and manufacturing method thereof
MACRONIX INT CO LTD0 citations42