Inventor
CHENG CHENG-HSIEN
TW23 patents
⚠️ This page may combine multiple inventors who share the name “CHENG CHENG-HSIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
18 patentsUS9589982B1Mar 7, 2017
Structure and method of operation for improved gate capacity for 3D NOR flash memory
MACRONIX INT CO LTD215 citations98
US10644018B2May 5, 2020
3D memory having plural lower select gates
MACRONIX INT CO LTD9 citations83
US11037632B1Jun 15, 2021
Multi-tier 3D memory and erase method thereof
MACRONIX INT CO LTD3 citations73
US11062759B1Jul 13, 2021
Memory device and programming method thereof
MACRONIX INT CO LTD3 citations72
US10796753B1Oct 6, 2020
Method and system to determine quick pass write operation in increment step pulse programming operation
MACRONIX INT CO LTD2 citations72
US9548121B2Jan 17, 2017
Memory device having only the top poly cut
MACRONIX INT CO LTD2 citations72
US9437612B1Sep 6, 2016
Three-dimensional memory
MACRONIX INT CO LTD3 citations72
US11322207B1May 3, 2022
Program method including multiple precharge steps for memory device
MACRONIX INT CO LTD2 citations69
US10460797B2Oct 29, 2019
Method for programming non-volatile memory and memory system
MACRONIX INT CO LTD1 citations62
US10340017B2Jul 2, 2019
Erase-verify method for three-dimensional memories and memory system
MACRONIX INT CO LTD1 citations62
US9524784B1Dec 20, 2016
Device and method for improved threshold voltage distribution for non-volatile memory
MACRONIX INT CO LTD2 citations62
US11361824B1Jun 14, 2022
Memory device and operation method thereof
MACRONIX INT CO LTD0 citations61
US9324431B1Apr 26, 2016
Floating gate memory device with interpoly charge trapping structure
MACRONIX INT CO LTD0 citations52
US11289132B1Mar 29, 2022
Operation method of memory device
MACRONIX INT CO LTD0 citations51
US9786794B2Oct 10, 2017
Method of fabricating memory structure
MACRONIX INT CO LTD0 citations51
US9349878B2May 24, 2016
Multi level programmable memory structure
MACRONIX INT CO LTD0 citations51
US9048263B2Jun 2, 2015
Manufacturing method of non-volatile memory
MACRONIX INT CO LTD0 citations51
US9018085B2Apr 28, 2015
Method of fabricating memory device with charge storage layer at gap located side of gate dielectric underneath the gate
MACRONIX INT CO LTD0 citations51