Inventor
MOMOSE HISAYO S
JP3 patents
Patents
3 patentsUS5489542AFeb 6, 1996
Method for fabricating semiconductor device in which threshold voltage shift and charge-pumping current are improved
TOSHIBA KK71 citations95
US5237188AAug 17, 1993
Semiconductor device with nitrided gate insulating film
TOSHIBA KK83 citations95
US5227855AJul 13, 1993
Semiconductor memory device having a ferroelectric substance as a memory element
TOSHIBA KK61 citations92