Inventor
FOISY MARK C
US3 patents
Patents
3 patentsUS7442621B2Oct 28, 2008
Semiconductor process for forming stress absorbent shallow trench isolation structures
FREESCALE SEMICONDUCTOR INC10 citations82
US7687337B2Mar 30, 2010
Transistor with differently doped strained current electrode region
FREESCALE SEMICONDUCTOR INC13 citations81
US7344933B2Mar 18, 2008
Method of forming device having a raised extension region
FREESCALE SEMICONDUCTOR INC1 citations49