Inventor

PREJBEANU IOAN LUCIAN

FR32 patents

⚠️ This page may combine multiple inventors who share the name “PREJBEANU IOAN LUCIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PREJBEANU IOAN LUCIAN

CROCUS TECHNOLOGY SA

Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing current

Thermally assisted multi-level MRAM cell and method for writing a plurality of bits in the MRAM cell

Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal

Self-referenced magnetic random access memory element comprising a synthetic storage layer

Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal

Method for writing to a random access memory (MRAM) cell with improved MRAM cell lifespan

MRAM element having improved data retention and low writing temperature

Self-reference magnetic random access memory (MRAM) cell comprising ferrimagnetic layers

Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation

MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field current

Self-referenced MRAM cell with optimized reliability

Thermally-assisted MRAM cells with improved reliability at writing

Magnetic random access memory (MRAM) cell with low power consumption

Magnetoresistive element with oxygen getting layer having enhanced exchange bias and thermal stability for spintronic devices

Self-referenced MRAM element with linear sensing signal

MRAM element with low writing temperature

PREJBEANU IOAN LUCIAN

Magnetic tunnel junction comprising a polarizing layer

Magnetic memory with a thermally assisted writing procedure

Multibit magnetic random access memory cell with improved read margin

Magnetic random access memory with an elliptical magnetic tunnel junction

Magnetic memory with a thermally assisted writing procedure and reduced writing field

Magnetic tunnel junction with an improved tunnel barrier

COMMISSARIAT ENERGIE ATOMIQUE

Magnetic tunnel junction magnetic memory

Method for manufacturing a spintronic device comprising a thick active magnetic layer

Method for measuring an external magnetic field by at least one magnetic memory point

Magnetic tunnel junction comprising an inhomogeneous granular free layer and associated spintronic devices

LOMBARD LUCIEN

Magnetic random access memory cell with improved dispersion of the switching field

Multibit cell with synthetic storage layer

CENTRE NAT RECH SCIENT

Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same

NOZIERES JEAN-PIERRE

Magnetic element with thermally assisted writing

MACKAY KENNETH

Thermally assisted magnetic random access memory element with improved endurance

DUCRUET CLARISSE

Low power magnetic random access memory cell