Inventor
FAN JIEWEN
CN17 patents
⚠️ This page may combine multiple inventors who share the name “FAN JIEWEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HUANG RU
10 patentsUS9018968B2Apr 28, 2015
Method for testing density and location of gate dielectric layer trap of semiconductor device
HUANG RU17 citations81
US8564031B2Oct 22, 2013
High voltage-resistant lateral double-diffused transistor based on nanowire device
HUANG RU9 citations81
US8513067B2Aug 20, 2013
Fabrication method for surrounding gate silicon nanowire transistor with air as spacers
HUANG RU10 citations81
US8563370B2Oct 22, 2013
Method for fabricating surrounding-gate silicon nanowire transistor with air sidewalls
HUANG RU3 citations60
US8901644B2Dec 2, 2014
Field effect transistor with a vertical channel and fabrication method thereof
HUANG RU2 citations59
US9034702B2May 19, 2015
Method for fabricating silicon nanowire field effect transistor based on wet etching
HUANG RU1 citations51
US8592276B2Nov 26, 2013
Fabrication method of vertical silicon nanowire field effect transistor
HUANG RU1 citations51
US8866507B2Oct 21, 2014
Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contact
HUANG RU1 citations49
US8722312B2May 13, 2014
Method for fabricating semiconductor nano circular ring
HUANG RU0 citations48
US9099500B2Aug 4, 2015
Programmable array of silicon nanowire field effect transistor and method for fabricating the same
HUANG RU0 citations39
UNIV BEIJING
7 patentsUS9502310B1Nov 22, 2016
Integration method for a vertical nanowire transistor
UNIV BEIJING4 citations73
US8372752B1Feb 12, 2013
Method for fabricating ultra-fine nanowire
UNIV BEIJING5 citations71
US9478641B2Oct 25, 2016
Method for fabricating FinFET with separated double gates on bulk silicon
UNIV BEIJING2 citations62
US9396949B2Jul 19, 2016
Method of adjusting a threshold voltage of a multi-gate structure device
UNIV BEIJING0 citations52
US9356124B2May 31, 2016
Method for fabricating multi-gate structure device with source and drain having quasi-SOI structure
UNIV BEIJING0 citations41
US9425060B2Aug 23, 2016
Method for fabricating multiple layers of ultra narrow silicon wires
UNIV BEIJING0 citations38
US9349588B2May 24, 2016
Method for fabricating quasi-SOI source/drain field effect transistor device
UNIV BEIJING0 citations38