Inventor · disambiguated record
Calvin T. Gabriel
Also filed as: GABRIEL CALVIN · GABRIEL CALVIN T · GABRIEL CALVIN TODD
101 granted patents·4 pending applications·3,442 citations·filing 1989–2015
99Inventor score
Files withADVANCED MICRO DEVICES INC39VLSI TECHNOLOGY INC39SPANSION LLC7PHILIPS ELECTRONICS NA6KONINKL PHILIPS ELECTRONICS NV5
Top patents by PatentIndex Score
105 records- 0199US6716571B2Selective photoresist hardening to facilitate lateral trimmingADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 6, 2004·545 cites·24 claims
- 0296US6297170B1Sacrificial multilayer anti-reflective coating for mos gate formationVLSI TECHNOLOGY INC·Filed 1998·Granted Oct 2, 2001·240 cites·30 claims
- 0393US6645679B1Attenuated phase shift mask for use in EUV lithography and a method of making such a maskADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 11, 2003·51 cites·20 claims
- 0492US6583046B1Post-treatment of low-k dielectric for prevention of photoresist poisoningADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 24, 2003·67 cites·26 claims
- 0592US6475929B1Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constantADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 5, 2002·70 cites·18 claims
- 0692US5420796AMethod of inspecting planarity of wafer surface after etchback step in integrated circuit fabricationVLSI TECHNOLOGY INC·Filed 1993·Granted May 30, 1995·141 cites·19 claims
- 0792US5405488ASystem and method for plasma etching endpoint detectionVLSI TECHNOLOGY INC·Filed 1993·Granted Apr 11, 1995·92 cites·9 claims
- 0890US6864184B1Method for reducing critical dimension attainable via the use of an organic conforming layerADVANCED MICRO DEVICES INC·Filed 2004·Granted Mar 8, 2005·49 cites·21 claims
- 0989US7309659B1Silicon-containing resist to pattern organic low k-dielectricsADVANCED MICRO DEVICES INC·Filed 2005·Granted Dec 18, 2007·15 cites·20 claims
- 1089US7235414B1Using scatterometry to verify contact hole opening during tapered bilayer etchADVANCED MICRO DEVICES INC·Filed 2005·Granted Jun 26, 2007·13 cites·20 claims
- 1189US6534397B1Pre-treatment of low-k dielectric for prevention of photoresist poisoningADVANCED MICRO DEVICES INC·Filed 2001·Granted Mar 18, 2003·56 cites·21 claims
- 1289US6323113B1Intelligent gate-level fill methods for reducing global pattern density effectsPHILIPS ELECTRONICS NA·Filed 1999·Granted Nov 27, 2001·106 cites·34 claims
- 1389US5120679AAnti-fuse structures and methods for making sameVLSI TECHNOLOGY INC·Filed 1991·Granted Jun 9, 1992·116 cites·16 claims
- 1488US5198072AMethod and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch systemVLSI TECHNOLOGY INC·Filed 1990·Granted Mar 30, 1993·53 cites·20 claims
- 1587US8035153B2Self-aligned patterning method by using non-conformal film and etch for flash memory and other semiconductor applicationsSPANSION LLC·Filed 2010·Granted Oct 11, 2011·9 cites·27 claims
- 1687US6811956B1Line edge roughness reduction by plasma treatment before etchADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 2, 2004·35 cites·26 claims
- 1787US6599839B1Plasma etch process for nonhomogenous filmADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 29, 2003·36 cites·10 claims
- 1887US6472231B1Dielectric layer with treated top surface forming an etch stop layer and method of making the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 29, 2002·43 cites·17 claims
- 1987US6107158AMethod of manufacturing a trench structure in a semiconductor substrateVLSI TECHNOLOGY INC·Filed 1998·Granted Aug 22, 2000·82 cites·11 claims
- 2087US5639697ADummy underlayers for improvement in removal rate consistency during chemical mechanical polishingVLSI TECHNOLOGY INC·Filed 1996·Granted Jun 17, 1997·73 cites·8 claims
- 2186US5776821AMethod for forming a reduced width gate electrodeVLSI TECHNOLOGY INC·Filed 1997·Granted Jul 7, 1998·80 cites·26 claims
- 2285US6569757B1Methods for forming co-axial interconnect lines in a CMOS process for high speed applicationsPHILIPS ELECTRONICS NA·Filed 1999·Granted May 27, 2003·74 cites·18 claims
- 2385US6518646B1Semiconductor device with variable composition low-k inter-layer dielectric and method of makingADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 11, 2003·40 cites·14 claims
- 2484US6521524B1Via filled dual damascene structure with middle stop layer and method for making the sameADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 18, 2003·36 cites·15 claims
- 2584US5861342AOptimized structures for dummy fill mask designVLSI TECHNOLOGY INC·Filed 1995·Granted Jan 19, 1999·75 cites·19 claims
- 2684US4954212AEndpoint detection system and method for plasma etchingVLSI TECHNOLOGY INC·Filed 1989·Granted Sep 4, 1990·32 cites·12 claims
- 2783US5290734AMethod for making anti-fuse structuresVLSI TECHNOLOGY INC·Filed 1991·Granted Mar 1, 1994·78 cites·15 claims
- 2882US6465889B1Silicon carbide barc in dual damascene processingADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 15, 2002·32 cites·20 claims
- 2981US6713382B1Vapor treatment for repairing damage of low-k dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 30, 2004·37 cites·10 claims
- 3081US6593037B1EUV mask or reticle having reduced reflectionsADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 15, 2003·30 cites·22 claims
- 3181US6545338B1Methods for implementing co-axial interconnect lines in a CMOS process for high speed RF and microwave applicationsKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Apr 8, 2003·63 cites·5 claims
- 3280US6372631B1Method of making a via filled dual damascene structure without middle stop layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 16, 2002·29 cites·17 claims
- 3378US6387720B1Waveguide structures integrated with standard CMOS circuitry and methods for making the samePHILLIPS ELECTRONICS NORTH AME·Filed 1999·Granted May 14, 2002·51 cites·15 claims
- 3477US6451673B1Carrier gas modification for preservation of mask layer during plasma etchingADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 17, 2002·20 cites·20 claims
- 3577US6207565B1Integrated process for ashing resist and treating silicon after masked spacer etchVLSI TECHNOLOGY INC·Filed 2000·Granted Mar 27, 2001·22 cites·14 claims
- 3676US5522957AMethod for leak detection in etching chambersVLSI TECHNOLOGY INC·Filed 1993·Granted Jun 4, 1996·28 cites·7 claims
- 3775US7052921B1System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography processADVANCED MICRO DEVICES INC·Filed 2004·Granted May 30, 2006·16 cites·12 claims
- 3875US6383919B1Method of making a dual damascene structure without middle stop layerADVANCED MICRO DEVICES INC·Filed 2001·Granted May 7, 2002·18 cites·17 claims
- 3975US5753561AMethod for making shallow trench isolation structure having rounded cornersVLSI TECHNOLOGY INC·Filed 1996·Granted May 19, 1998·50 cites·23 claims
- 4074US9368393B2Line-edge roughness improvement for small pitchesSPANSION LLC·Filed 2014·Granted Jun 14, 2016·2 cites·8 claims
- 4174US6815359B2Process for improving the etch stability of ultra-thin photoresistADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 9, 2004·16 cites·23 claims
- 4274US6380092B1Gas phase planarization process for semiconductor wafersVLSI TECHNOLOGY INC·Filed 2000·Granted Apr 30, 2002·13 cites·20 claims
- 4373US7427457B1Methods for designing grating structures for use in situ scatterometry to detect photoresist defectsADVANCED MICRO DEVICES INC·Filed 2004·Granted Sep 23, 2008·11 cites·27 claims
- 4473US6603206B2Slot via filled dual damascene interconnect structure without middle etch stop layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 5, 2003·17 cites·5 claims
- 4572US7468296B1Thin film germanium diode with low reverse breakdownSPANSION LLC·Filed 2005·Granted Dec 23, 2008·4 cites·18 claims
- 4671US7732276B2Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applicationsSPANSION LLC·Filed 2007·Granted Jun 8, 2010·4 cites·20 claims
- 4771US6448654B1Ultra thin etch stop layer for damascene processADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 10, 2002·16 cites·12 claims
- 4871US6410210B1Semiconductor blocking layer for preventing UV radiation damage to MOS gate oxidesPHILIPS SEMICONDUCTORS·Filed 1999·Granted Jun 25, 2002·35 cites·14 claims
- 4970US5294295AMethod for moisture sealing integrated circuits using silicon nitride spacer protection of oxide passivation edgesVLSI TECHNOLOGY INC·Filed 1991·Granted Mar 15, 1994·41 cites·2 claims
- 5069US7279429B1Method to improve ignition in plasma etching or plasma deposition stepsADVANCED MICRO DEVICES INC·Filed 2004·Granted Oct 9, 2007·7 cites·23 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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