Inventor · disambiguated record
Vladimir V. Voronkov
Also filed as: VORONKOV VLADIMIR · VORONKOV VLADIMIR V
23 granted patents·5 pending applications·143 citations·filing 1999–2019
95Inventor score
Files withMEMC ELECTRONIC MATERIALS16GLOBALWAFERS CO LTD4SUNEDISON SEMICONDUCTOR LTD UEN201334164H3FALSTER ROBERT J1MEMC ELECTRONIC MAT S P A1
Top patents by PatentIndex Score
28 records- 0192US9583364B2Processes and apparatus for preparing heterostructures with reduced strain by radial compressionSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2013·Granted Feb 28, 2017·8 cites·15 claims
- 0291US7485928B2Arsenic and phosphorus doped silicon wafer substrates having intrinsic getteringMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Feb 3, 2009·20 cites·26 claims
- 0390US11282715B2Apparatus for stressing semiconductor substratesGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 22, 2022·3 cites·10 claims
- 0490US10361097B2Apparatus for stressing semiconductor substratesSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2013·Granted Jul 23, 2019·6 cites·17 claims
- 0589US9583363B2Processes and apparatus for preparing heterostructures with reduced strain by radial distensionSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2013·Granted Feb 28, 2017·5 cites·19 claims
- 0688US6689209B2Process for preparing low defect density silicon using high growth ratesMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Feb 10, 2004·24 cites·47 claims
- 0787US11276583B2Apparatus for stressing semiconductor substratesGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 15, 2022·2 cites·13 claims
- 0885US8026145B2Arsenic and phosphorus doped silicon wafer substrates having intrinsic getteringMEMC ELECTRONIC MATERIALS·Filed 2008·Granted Sep 27, 2011·10 cites·18 claims
- 0983US7521382B2High resistivity silicon structure and a process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2006·Granted Apr 21, 2009·15 cites·54 claims
- 1077US6312516B2Process for preparing defect free silicon crystals which allows for variability in process conditionsMEMC ELECTRONIC MATERIALS·Filed 1999·Granted Nov 6, 2001·25 cites·33 claims
- 1174US9634098B2Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski methodMEMC ELECTRONIC MAT S P A·Filed 2013·Granted Apr 25, 2017·3 cites·20 claims
- 1268US11764071B2Apparatus for stressing semiconductor substratesGLOBALWAFERS CO LTD·Filed 2019·Granted Sep 19, 2023·0 cites·7 claims
- 1368US11276582B2Apparatus for stressing semiconductor substratesGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 15, 2022·0 cites·10 claims
- 1468US6500255B2Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defectsMEMC ELECTRONIC MATERIALS·Filed 2001·Granted Dec 31, 2002·5 cites·42 claims
- 1566US6803576B2Analytical method to measure nitrogen concentration in single crystal siliconMEMC ELECTRONIC MATERIALS SPA·Filed 2002·Granted Oct 12, 2004·9 cites·58 claims
- 1659US2009022930A1Single crystal silicon having improved gate oxide integrityMEMC ELECTRONIC MATERIALS·Filed 2008·Application pending·0 cites
- 1758US6986925B2Single crystal silicon having improved gate oxide integrityMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Jan 17, 2006·3 cites·27 claims
- 1855US6955718B2Process for preparing a stabilized ideal oxygen precipitating silicon waferMEMC ELECTRONIC MATERIALS·Filed 2003·Granted Oct 18, 2005·5 cites·22 claims
- 1954US7431765B2Process for preparing single crystal silicon having improved gate oxide integrityMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Oct 7, 2008·0 cites·22 claims
- 2051US9142616B2Silicon wafers with suppressed minority carrier lifetime degradationSUNEDISON INC·Filed 2015·Granted Sep 22, 2015·0 cites·20 claims
- 2150US7105050B2Method for the production of low defect density siliconMEMC ELECTRONIC MATERIALS·Filed 2005·Granted Sep 12, 2006·0 cites·36 claims
- 2248US2009252974A1Epitaxial wafer having a heavily doped substrate and process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2009·Application pending·0 cites
- 2346US6652646B2Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditionsMEMC ELECTRONIC MATERIALS·Filed 2002·Granted Nov 25, 2003·0 cites·24 claims
- 2445US8969119B2Processes for suppressing minority carrier lifetime degradation in silicon wafersFALSTER ROBERT J·Filed 2012·Granted Mar 3, 2015·0 cites·50 claims
- 2545US2009004458A1Diffusion Control in Heavily Doped SubstratesMEMC ELECTRONIC MATERIALS·Filed 2007·Application pending·0 cites
- 2643US9129919B2Production of high precipitate density wafers by activation of inactive oxygen precipitate nucleiSUNEDISON SEMICONDUCTOR LTD·Filed 2013·Granted Sep 8, 2015·0 cites·23 claims
- 2741US2011250739A1Epitaxial wafer having a heavily doped substrate and process for the preparation thereofMEMC ELECTRONIC MATERIALS·Filed 2011·Application pending·0 cites
- 2839US2003196587A1Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleationMEMC ELECTRONIC MATERIALS·Filed 2003·Application pending·0 cites
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