Inventor
LEE BONGYONG
KR22 patents
⚠️ This page may combine multiple inventors who share the name “LEE BONGYONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
15 patentsUS9042175B2May 26, 2015
Non-volatile memory device and read method thereof
SAMSUNG ELECTRONICS CO LTD22 citations92
US10741577B2Aug 11, 2020
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD7 citations83
US8942042B2Jan 27, 2015
Nonvolatile memory device and a method of adjusting a threshold voltage of a ground selection transistor thereof
SAMSUNG ELECTRONICS CO LTD8 citations82
US8363482B2Jan 29, 2013
Flash memory devices with selective bit line discharge paths and methods of operating the same
SAMSUNG ELECTRONICS CO LTD8 citations76
US11315946B2Apr 26, 2022
Vertical semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10971513B2Apr 6, 2021
Three-dimensional semiconductor memory devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10923195B2Feb 16, 2021
Nonvolatile memory device, an operating method thereof, and a storage system including the nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations71
US10790358B2Sep 29, 2020
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations71
US10403719B2Sep 3, 2019
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD5 citations71
US10998334B2May 4, 2021
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD3 citations70
US12520496B2Jan 6, 2026
Semiconductor memory device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12290007B2Apr 29, 2025
Magnetic memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11778825B2Oct 3, 2023
Method of fabricating a vertical semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11114165B2Sep 7, 2021
Semiconductor devices having increased efficiency in generation of gate-induced drain leakage current without insulation deterioration and methods of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US12278165B2Apr 15, 2025
Semiconductor storage devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
SEMICONDUCTOR COMPONENTS IND LLC
5 patentsUS12501649B2Dec 16, 2025
Power device with graded channel
SEMICONDUCTOR COMPONENTS IND LLC0 citations58
US11605732B2Mar 14, 2023
Power device with graded channel
SEMICONDUCTOR COMPONENTS IND LLC0 citations58
US12125884B2Oct 22, 2024
MOSFET device with undulating channel
SEMICONDUCTOR COMPONENTS IND LLC0 citations56
US11658214B2May 23, 2023
MOSFET device with undulating channel
SEMICONDUCTOR COMPONENTS IND LLC0 citations56
US11398437B2Jul 26, 2022
Power device including metal layer
SEMICONDUCTOR COMPONENTS IND LLC1 citations56