P

Inventor

LEE BONGYONG

KR22 patents
⚠️ This page may combine multiple inventors who share the name “LEE BONGYONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents
US9042175B2May 26, 2015

Non-volatile memory device and read method thereof

SAMSUNG ELECTRONICS CO LTD22 citations92
US10741577B2Aug 11, 2020

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD7 citations83
US8942042B2Jan 27, 2015

Nonvolatile memory device and a method of adjusting a threshold voltage of a ground selection transistor thereof

SAMSUNG ELECTRONICS CO LTD8 citations82
US8363482B2Jan 29, 2013

Flash memory devices with selective bit line discharge paths and methods of operating the same

SAMSUNG ELECTRONICS CO LTD8 citations76
US11315946B2Apr 26, 2022

Vertical semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10971513B2Apr 6, 2021

Three-dimensional semiconductor memory devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US10923195B2Feb 16, 2021

Nonvolatile memory device, an operating method thereof, and a storage system including the nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD3 citations71
US10790358B2Sep 29, 2020

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD4 citations71
US10403719B2Sep 3, 2019

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD5 citations71
US10998334B2May 4, 2021

Three-dimensional semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD3 citations70
US12520496B2Jan 6, 2026

Semiconductor memory device and electronic system including the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12290007B2Apr 29, 2025

Magnetic memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11778825B2Oct 3, 2023

Method of fabricating a vertical semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations60
US11114165B2Sep 7, 2021

Semiconductor devices having increased efficiency in generation of gate-induced drain leakage current without insulation deterioration and methods of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations60
US12278165B2Apr 15, 2025

Semiconductor storage devices and data storage systems including the same

SAMSUNG ELECTRONICS CO LTD0 citations50

SEMICONDUCTOR COMPONENTS IND LLC

5 patents

LEE BONGYONG

1 patent

NEXTGEN BIOSCIENCE CO LTD

1 patent