Inventor
PRASAD JAYASIMHA SWAMY
US4 patents
Patents
4 patentsUS6699765B1Mar 2, 2004
Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
MICREL INC30 citations85
US6913981B2Jul 5, 2005
Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
MICREL INC2 citations55
US9780204B2Oct 3, 2017
DMOS transistor with trench schottky diode
MICREL INC0 citations47
US9530880B2Dec 27, 2016
DMOS transistor with trench schottky diode
MICREL INC1 citations47