Inventor
SAADAT OMAIR
US4 patents
Patents
4 patentsUS12295170B2May 6, 2025
Fabrication of gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer
INTEL CORP1 citations62
US12426342B2Sep 23, 2025
Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability
INTEL CORP0 citations59
US12439669B2Oct 7, 2025
Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts
INTEL CORP0 citations58
US12113068B2Oct 8, 2024
Fabrication of gate-all-around integrated circuit structures having additive metal gates
INTEL CORP0 citations50