Inventor
HUANG MING-CHI
TW29 patents
⚠️ This page may combine multiple inventors who share the name “HUANG MING-CHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
25 patentsUS10304835B1May 28, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD33 citations97
US10811320B2Oct 20, 2020
Footing removal in cut-metal process
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10283503B2May 7, 2019
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11502080B2Nov 15, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11189714B2Nov 30, 2021
Gate stack structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11114436B2Sep 7, 2021
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10868013B2Dec 15, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10748898B2Aug 18, 2020
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10510756B1Dec 17, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12255107B2Mar 18, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12015077B2Jun 18, 2024
Metal gate using monolayers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11887896B2Jan 30, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854903B2Dec 26, 2023
Footing removal in cut-metal process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11855098B2Dec 26, 2023
Semiconductor devices having dipole-inducing elements
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11362006B2Jun 14, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11257924B2Feb 22, 2022
Metal gate using monolayers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11239328B2Feb 1, 2022
Semiconductor device having interfacial layer and high κ dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12495603B2Dec 9, 2025
Semiconductor device and manufacturing method for the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11594455B2Feb 28, 2023
Semiconductor device and manufacturing method for the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12426309B2Sep 23, 2025
Method of manufacturing semiconductor devices and semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations55
US11682669B2Jun 20, 2023
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10720516B2Jul 21, 2020
Gate stack structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10714575B2Jul 14, 2020
Semiconductor device having interfacial layer and high K dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10541317B2Jan 21, 2020
Method of forming a metal gate using monolayers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10290716B2May 14, 2019
Semiconductor device having interfacial layer and high κ dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52