Inventor
PENG YU-REN
CN20 patents
⚠️ This page may combine multiple inventors who share the name “PENG YU-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EPISTAR CORP
10 patentsUS10367118B2Jul 30, 2019
Light-emitting diode
EPISTAR CORP3 citations73
US9685588B2Jun 20, 2017
Light-emitting element having a reflective structure with high efficiency
EPISTAR CORP1 citations61
US9331247B2May 3, 2016
Light-emitting element having a reflective structure with high efficiency
EPISTAR CORP1 citations61
US9472719B2Oct 18, 2016
Light-emitting diode
EPISTAR CORP1 citations52
US10693039B2Jun 23, 2020
Light-emitting element having a reflective structure with high efficiency
EPISTAR CORP0 citations50
US10600938B2Mar 24, 2020
Light-emitting device with tunnel junction
EPISTAR CORP0 citations50
US10008636B2Jun 26, 2018
Light-emitting device
EPISTAR CORP0 citations50
US9859470B2Jan 2, 2018
Light-emitting device with adjusting element
EPISTAR CORP0 citations50
US9825088B2Nov 21, 2017
Light-emitting device and manufacturing method thereof
EPISTAR CORP0 citations49
US9087967B2Jul 21, 2015
Light-emitting device
EPISTAR CORP0 citations41
TAIWAN SEMICONDUCTOR MFG CO LTD
4 patentsUS11603602B2Mar 14, 2023
Method for controlling electrochemical deposition to avoid defects in interconnect structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11015260B2May 25, 2021
Method for controlling electrochemical deposition to avoid defects in interconnect structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10879629B2Dec 29, 2020
Method of electroplating metal into recessed feature and electroplating layer in recessed feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10749278B2Aug 18, 2020
Method of electroplating metal into recessed feature and electroplating layer in recessed feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TIANJIN SANAN OPTOELECTRONICS CO LTD
4 patentsUS12211957B2Jan 28, 2025
Flip-chip light-emitting diode comprising multiple transparent dielectric layers and distributed Bragg reflector (DBR) structure
TIANJIN SANAN OPTOELECTRONICS CO LTD1 citations61
US12364081B2Jul 15, 2025
Light emitting device and method for producing the same
TIANJIN SANAN OPTOELECTRONICS CO LTD0 citations55
US12119425B2Oct 15, 2024
Multi-junction light-emitting diode and method for making the same
TIANJIN SANAN OPTOELECTRONICS CO LTD0 citations47
US12520624B2Jan 6, 2026
Light-emitting device
TIANJIN SANAN OPTOELECTRONICS CO LTD0 citations42