Inventor
MORITA ETSUO
JP20 patents
⚠️ This page may combine multiple inventors who share the name “MORITA ETSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
19 patentsUS6967353B2Nov 22, 2005
Semiconductor light emitting device and fabrication method thereof
SONY CORP480 citations99
US6232623B1May 15, 2001
Semiconductor device on a sapphire substrate
SONY CORP107 citations99
US6727523B2Apr 27, 2004
Method of manufacturing crystal of iii-v compounds of the nitride system, crystal substrate of iii-v compounds of the nitride system, crystal film of iii-v compounds of the nitride system, and method of manufacturing device
SONY CORP85 citations98
US6501154B2Dec 31, 2002
Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure
SONY CORP79 citations98
US6121636ASep 19, 2000
Semiconductor light emitting device
SONY CORP110 citations98
US7125736B2Oct 24, 2006
Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate
SONY CORP44 citations96
US7033854B2Apr 25, 2006
Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate
SONY CORP50 citations96
US5705421AJan 6, 1998
A SOI substrate fabricating method
SONY CORP109 citations94
US7364805B2Apr 29, 2008
Crystal film, crystal substrate, and semiconductor device
SONY CORP22 citations92
US6498048B2Dec 24, 2002
Method of manufacturing crystal of iii-v compounds of the nitride system, crystal substrate of iii-v compounds of the nitride system, crystal film of iii-v compounds of the nitride system, and method of manufacturing device
SONY CORP40 citations92
US6107162AAug 22, 2000
Method for manufacture of cleaved light emitting semiconductor device
SONY CORP40 citations92
US5821568AOct 13, 1998
Cleaved semiconductor device with {11-20} plane
SONY CORP36 citations92
US5753966AMay 19, 1998
Semiconductor device with cleaved surface
SONY CORP34 citations92
US7727331B2Jun 1, 2010
Crystal firm, crystal substrate, and semiconductor device
SONY CORP8 citations84
US7244308B2Jul 17, 2007
Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device
SONY CORP9 citations74
US5828086AOct 27, 1998
Semiconductor light emitting device with a Mg superlattice structure
SONY CORP8 citations74
US5665977ASep 9, 1997
Semiconductor light emitting device with defect decomposing and blocking layers
SONY CORP14 citations74
US5418374AMay 23, 1995
Semiconductor device having an active layer with regions with different bandgaps
SONY CORP18 citations74
US7294201B2Nov 13, 2007
Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device
SONY CORP4 citations63