Inventor
WHITEMAN MICHAEL D
US5 patents
Patents
5 patentsUS6489254B1Dec 3, 2002
Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG
ATMEL CORP28 citations90
US7176112B2Feb 13, 2007
Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material
ATMEL CORP8 citations71
US6596604B1Jul 22, 2003
Method of preventing shift of alignment marks during rapid thermal processing
ATMEL CORP12 citations71
US7569458B2Aug 4, 2009
Non-thermally annealed doped semiconductor material and methods related thereto
ATMEL CORP0 citations50
USRE40507ESep 16, 2008
Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG
ATMEL CORP0 citations50