Inventor

YANG JI-YI

TW9 patents

⚠️ This page may combine multiple inventors who share the name “YANG JI-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

4 patents

US7625791B2Dec 1, 2009

High-k dielectric metal gate device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG26 citations92

US7176138B2Feb 13, 2007

Selective nitride liner formation for shallow trench isolation

TAIWAN SEMICONDUCTOR MFG15 citations92

US7157350B2Jan 2, 2007

Method of forming SOI-like structure in a bulk semiconductor substrate using self-organized atomic migration

TAIWAN SEMICONDUCTOR MFG23 citations92

US7327009B2Feb 5, 2008

Selective nitride liner formation for shallow trench isolation

TAIWAN SEMICONDUCTOR MFG5 citations73

NAT SCIENCE COUNCIL

2 patents

US6284621B1Sep 4, 2001

Semiconductor structure with a dielectric layer and its producing method

NAT SCIENCE COUNCIL11 citations72

US6046475AApr 4, 2000

Structure and method for manufacturing devices having inverse T-shaped well regions

NAT SCIENCE COUNCIL8 citations71

YANG JI-YI

1 patent

US8673736B2Mar 18, 2014

Method of forming SOI-like structure in a bulk semiconductor substrate by annealing a lower portion of a trench while protecting an upper portion of the trench

YANG JI-YI6 citations79

TAIWAN SEMCONDUCTOR MFG CO LTD

1 patent

US7829949B2Nov 9, 2010

High-K dielectric metal gate device structure

TAIWAN SEMCONDUCTOR MFG CO LTD2 citations60

WISTRON CORP

1 patent

US12277709B2Apr 15, 2025

Portable electronic device and wound-size measuring method using the same

WISTRON CORP0 citations38