Inventor
STADTMUELLER MICHAEL
AT16 patents
⚠️ This page may combine multiple inventors who share the name “STADTMUELLER MICHAEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
10 patentsUS9825131B2Nov 21, 2017
Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors
INFINEON TECHNOLOGIES AG2 citations73
US10192955B2Jan 29, 2019
Semiconductor device containing oxygen-related thermal donors
INFINEON TECHNOLOGIES AG1 citations62
US7094637B2Aug 22, 2006
Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates
INFINEON TECHNOLOGIES AG2 citations58
US12341012B2Jun 24, 2025
Method for annealing a gate insulation layer on a wide band gap semiconductor substrate
INFINEON TECHNOLOGIES AG0 citations56
US11295951B2Apr 5, 2022
Wide band gap semiconductor device and method for forming a wide band gap semiconductor device
INFINEON TECHNOLOGIES AG0 citations56
US9881991B2Jan 30, 2018
Capacitor and method of forming a capacitor
INFINEON TECHNOLOGIES AG0 citations51
US9196675B2Nov 24, 2015
Capacitor and method of forming a capacitor
INFINEON TECHNOLOGIES AG0 citations51
US11127839B2Sep 21, 2021
Method of manufacturing a trench oxide in a trench for a gate structure in a semiconductor substrate
INFINEON TECHNOLOGIES AG0 citations50
US7547646B2Jun 16, 2009
Trench capacitor structure and process for applying a covering layer and a mask for trench etching processes in semiconductor substrates
INFINEON TECHNOLOGIES AG1 citations46
US7144770B2Dec 5, 2006
Memory cell and method for fabricating it
INFINEON TECHNOLOGIES AG0 citations41
INFINEON TECHNOLOGIES AUSTRIA AG
3 patentsUS12471324B2Nov 11, 2025
Power semiconductor device having an electrode with an embedded material
INFINEON TECHNOLOGIES AUSTRIA AG0 citations57
US11728427B2Aug 15, 2023
Power semiconductor device having a strain-inducing material embedded in an electrode
INFINEON TECHNOLOGIES AUSTRIA AG1 citations57
US9515162B2Dec 6, 2016
Surface treatment of semiconductor substrate using free radical state fluorine particles
INFINEON TECHNOLOGIES AUSTRIA AG2 citations55