Inventor
NAM HEEHYUN
KR10 patents
Patents
10 patentsUS10762000B2Sep 1, 2020
Techniques to reduce read-modify-write overhead in hybrid DRAM/NAND memory
SAMSUNG ELECTRONICS CO LTD7 citations84
US11175853B2Nov 16, 2021
Systems and methods for write and flush support in hybrid memory
SAMSUNG ELECTRONICS CO LTD3 citations73
US11741034B2Aug 29, 2023
Memory device including direct memory access engine, system including the memory device, and method of operating the memory device
SAMSUNG ELECTRONICS CO LTD6 citations72
US11853215B2Dec 26, 2023
Memory controller, system including the same, and operating method of memory device for increasing a cache hit and reducing read latency using an integrated commad
SAMSUNG ELECTRONICS CO LTD3 citations71
US12056066B2Aug 6, 2024
System, device, and method for accessing memory based on multi-protocol
SAMSUNG ELECTRONICS CO LTD5 citations70
US12079080B2Sep 3, 2024
Memory controller performing selective and parallel error correction, system including the same and operating method of memory device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11720442B2Aug 8, 2023
Memory controller performing selective and parallel error correction, system including the same and operating method of memory device
SAMSUNG ELECTRONICS CO LTD1 citations60
US11983115B2May 14, 2024
System, device and method for accessing device-attached memory
SAMSUNG ELECTRONICS CO LTD0 citations58
US11586543B2Feb 21, 2023
System, device and method for accessing device-attached memory
SAMSUNG ELECTRONICS CO LTD0 citations58
US12001683B2Jun 4, 2024
Memory device, memory system including the same, and operating method of the memory system
SAMSUNG ELECTRONICS CO LTD0 citations39