Inventor

PRASAD BHAGWATI

US34 patents

⚠️ This page may combine multiple inventors who share the name “PRASAD BHAGWATI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PRASAD BHAGWATI

WESTERN DIGITAL TECH INC

Spinel containing magnetic tunnel junction and method of making the same

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same

Spinel containing magnetic tunnel junction and method of making the same

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Magnetoresistive memory device including a plurality of reference layers

Magnetoresistive memory device including a reference layer side dielectric spacer layer

Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same

Tunneling metamagnetic resistance memory device and methods of operating the same

Tunneling metamagnetic resistance memory device and methods of operating the same

Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same

Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof

Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same

Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same

Magnetoresistive memory device including a magnesium containing dust layer

Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same

Magnetic device including multiferroic regions and methods of forming the same

Data storage device with voltage-assisted magnetic recording (VAMR) for high density magnetic recording

Spinel containing magnetic tunnel junction and method of making the same

Magnetoresistive memory device including a magnesium containing dust layer

SANDISK TECHNOLOGIES LLC

Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same

Ferroelectric device with multiple polarization states and method of making the same

Ferroelectric field effect transistors having enhanced memory window and methods of making the same

Antiferroelectric memory devices and methods of making the same

Antiferroelectric memory devices and methods of making the same

Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same

Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same

Ferroelectric field effect transistors having enhanced memory window and methods of making the same

Memory device containing composition-controlled ferroelectric memory elements and method of making the same

Magnetoresistive memory device and method of operating same using phase controlled magnetic anisotropy

Memory device containing composition-controlled ferroelectric memory elements and method of making the same

SANDISK TECHNOLOGIES INC

Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer