Inventor

KRAUS BRENDA D

US51 patents

⚠️ This page may combine multiple inventors who share the name “KRAUS BRENDA D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KRAUS BRENDA D

MICRON TECHNOLOGY INC

Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures

RuSixOy-containing adhesion layers and process for fabricating the same

RuSixOy-containing adhesion layers

Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer

Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

Process for fabricating RuSixOy-containing adhesion layers

RuSixOy-containing adhesion layers and process for fabricating the same

Method of manufacturing a capacitor having RuSixOy-containing adhesion layers

Process for fabricating RuSixOy-containing adhesion layers

Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride

Method for improved metal fill by treatment of mobility layers

Method for making conductive nanoparticle charge storage element

ALD formed titanium nitride films

Atomic layer deposition methods of forming conductive metal nitride comprising layers

Capacitor having RuSixOy-containing adhesion layers

Method for metal fill by treatment of mobility layers

Method for making sol gel spacers for flat panel displays

Method for improved metal fill by treatment of mobility layers

Metal fill by treatment of mobility layers

Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps

Semiconductor device with metal fill by treatment of mobility layers including forming a refractory metal nitride using TMEDT

Process for fabricating RuSixOy-containing adhesion layers

Process for fabricating RuSixOy-containing adhesion layers

Method of depositing an aluminum nitride comprising layer over a semiconductor substrate

Assemblies having conductive structures with three or more different materials

Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio features

Assemblies having conductive structures with three or more different materials

Conductive nanoparticles

Electrode/dielectric barrier material formation and structures

Methods of forming silicon nitride including plasma exposure

Surface treatment of an oxide layer to enhance adhesion of a ruthenium metal layer

Ruthenium silicide wet etch

Field emission device having a covering comprising aluminum nitride

Ruthenium silicide wet etch

Ruthenium silicide wet etch

Computing device reboot

Computing device reboot

Confined resistance variable memory cell structures and methods

Atomic layer deposition method of forming conductive metal nitride-comprising layers

DRAM circuitry having storage capacitors which include capacitor dielectric regions comprising aluminum nitride

Methods of forming a field emission device

Method of forming DRAM circuitry, DRAM circuitry, method of forming a field emission device, and field emission device

Forming a barrier material on an electrode

Electrode formation

KRAUS BRENDA D

Confined resistance variable memory cell structures and methods

Titanium nitride films

Titanium nitride films

MARSH EUGENE P

Apparatus including rhodium-based charge traps

LODESTAR LICENSING GROUP LLC

Assemblies having conductive structures with three or more different materials