P

Inventor

SU HUAN-CHIEH

TW156 patents
⚠️ This page may combine multiple inventors who share the name “SU HUAN-CHIEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

49 patents
US11222892B2Jan 11, 2022

Backside power rail and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US11195930B1Dec 7, 2021

Semiconductor devices with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD17 citations94
US11581224B2Feb 14, 2023

Method for forming long channel back-side power rail device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11532713B2Dec 20, 2022

Source/drain contacts and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11450751B2Sep 20, 2022

Integrated circuit structure with backside via rail

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11443987B2Sep 13, 2022

Semiconductor devices with backside air gap dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11404548B2Aug 2, 2022

Capacitance reduction for backside power rail device

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11349004B2May 31, 2022

Backside vias in semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations86
US11233005B1Jan 25, 2022

Method for manufacturing an anchor-shaped backside via

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US10388771B1Aug 20, 2019

Method and device for forming cut-metal-gate feature

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US12369365B2Jul 22, 2025

Semiconductor devices with backside power rail and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations75
US11948973B2Apr 2, 2024

Gate-all-around field-effect transistor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11621197B2Apr 4, 2023

Semiconductor device with gate cut feature and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations75
US12148795B2Nov 19, 2024

Increasing device density and reducing cross-talk spacer structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12132092B2Oct 29, 2024

Backside vias in semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12009394B2Jun 11, 2024

Source/drain contacts and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11984350B2May 14, 2024

Integrated circuit structure with backside interconnection structure having air gap

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11955515B2Apr 9, 2024

Dual side contact structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11942530B2Mar 26, 2024

Semiconductor devices with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11929413B2Mar 12, 2024

Semiconductor device structure with metal gate stack

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11915972B2Feb 27, 2024

Methods of forming spacers for semiconductor devices including backside power rails

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11848372B2Dec 19, 2023

Method and structure for reducing source/drain contact resistance at wafer backside

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11804486B2Oct 31, 2023

Backside power rail and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11777003B2Oct 3, 2023

Semiconductor structure with wraparound backside amorphous layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11664280B2May 30, 2023

Semiconductor devices with backside air gap dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11658226B2May 23, 2023

Backside gate contact

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11658220B2May 23, 2023

Drain side recess for back-side power rail device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11631638B2Apr 18, 2023

Semiconductor structure having an anchor-shaped backside via

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11588050B2Feb 21, 2023

Backside contact

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11551969B2Jan 10, 2023

Integrated circuit structure with backside interconnection structure having air gap

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11532744B2Dec 20, 2022

Gate cut structure and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11532714B2Dec 20, 2022

Semiconductor device and method of forming thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11527609B2Dec 13, 2022

Increasing device density and reducing cross-talk spacer structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11502201B2Nov 15, 2022

Semiconductor device with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11482595B1Oct 25, 2022

Dual side contact structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11482594B2Oct 25, 2022

Semiconductor devices with backside power rail and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11456209B2Sep 27, 2022

Spacers for semiconductor devices including a backside power rails

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11430789B2Aug 30, 2022

Semiconductor devices with backside contacts and isolation

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11417745B2Aug 16, 2022

Structure and formation method of semiconductor device with metal gate stack

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11387233B2Jul 12, 2022

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11380682B2Jul 5, 2022

Integrated circuits with FinFET gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11328963B2May 10, 2022

Multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11329165B2May 10, 2022

Structure and formation method of semiconductor device with isolation structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11121036B2Sep 14, 2021

Multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11114529B2Sep 7, 2021

Gate-all-around field-effect transistor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10930763B2Feb 23, 2021

Method and device for forming metal gate electrodes for transistors

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10374058B2Aug 6, 2019

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10002796B1Jun 19, 2018

Dual epitaxial growth process for semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9786757B2Oct 10, 2017

Method of forming horizontal gate all around structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73

TAIWAN SEMICONDUCTOR MFG

1 patent

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