Inventor

CHEN CHUN-YUAN

TW121 patents

⚠️ This page may combine multiple inventors who share the name “CHEN CHUN-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN CHUN-YUAN

TAIWAN SEMICONDUCTOR MFG CO LTD

Backside power rail and methods of forming the same

Semiconductor devices with backside power rail and methods of fabrication thereof

Integrated circuit structure with backside via rail

Semiconductor devices with backside air gap dielectric

Method for manufacturing an anchor-shaped backside via

Extra doped region for back-side deep trench isolation

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensor

Extra doped region for back-side deep trench isolation

Stacked SPAD image sensor

Extra doped region for back-side deep trench isolation

Composite BSI structure and method of manufacturing the same

Semiconductor device with gate cut feature and method for forming the same

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

Dual side contact structures in semiconductor devices

Semiconductor devices with backside power rail and methods of fabrication thereof

Method and structure for reducing source/drain contact resistance at wafer backside

Backside power rail and methods of forming the same

Semiconductor structure with wraparound backside amorphous layer

Semiconductor devices with backside air gap dielectric

Backside gate contact

Semiconductor structure having an anchor-shaped backside via

Gate cut structure and method of forming the same

Dual side contact structures in semiconductor devices

Method for manufacturing semiconductor image sensor device having deep trench isolation

Semiconductor devices with backside contacts and isolation

Vertical gate field effect transistor

Semiconductor device structure and methods of forming the same

Contact resistance between via and conductive line

Composite bsi structure and method of manufacturing the same

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

Semiconductor image sensor device with deep trench isolations and method for manufacturing the same

Multiple deep trench isolation (MDTI) structure for CMOS image sensor

Extra doped region for back-side deep trench isolation

Backside signal interconnection

Multi-layer trench capacitor structure

Full well capacity for image sensor

Back-side illuminated (BSI) image sensor with global shutter scheme

Formation method of semiconductor device with stacked conductive structures

Semiconductor structure and method for forming the same

Integrated circuit with backside trench for nanosheet removal

Semiconductor structure with contact rail and method for forming the same

Integrated circuit structure with backside via rail

ACES ELECTRONICS CO LTD

Board-to-board connector

Board-to-board connector

POWERCHIP SEMICONDUCTOR CORP

Method for producing a gate

LIAN JR-WEI

Inertia sensing input controller and receiver and interactive system using thereof

L & K PREC INDUSTRY CO LTD

Module connector

AU OPTRONICS CORP

Backlight module and the method for manufacturing the same

IND TECH RES INST

Projecting apparatus and projecting calibration method