Inventor
CHIU SHIH-CHUAN
TW27 patents
⚠️ This page may combine multiple inventors who share the name “CHIU SHIH-CHUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS11222892B2Jan 11, 2022
Backside power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD16 citations94
US11955515B2Apr 9, 2024
Dual side contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11804486B2Oct 31, 2023
Backside power rail and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11777003B2Oct 3, 2023
Semiconductor structure with wraparound backside amorphous layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11502201B2Nov 15, 2022
Semiconductor device with backside power rail and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11482595B1Oct 25, 2022
Dual side contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11335592B2May 17, 2022
Contact resistance between via and conductive line
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11018012B2May 25, 2021
Contact structures with deposited silicide layers
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12457794B2Oct 28, 2025
Dual side contact structures for source/drain regions in semiconductor transistor devices and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12432994B2Sep 30, 2025
Source/drain metal contact and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12382709B2Aug 5, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12363939B2Jul 15, 2025
Semiconductor device with backside power rail and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266700B2Apr 1, 2025
Semiconductor nanostructures device structure with backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266566B2Apr 1, 2025
Contact resistance between via and conductive line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148805B2Nov 19, 2024
Semiconductor structure with wraparound backside amorphous layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125852B2Oct 22, 2024
Multi-gate transistors with backside power rail and reduced gate-drain capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027372B2Jul 2, 2024
Contact structures with deposited silicide layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009254B2Jun 11, 2024
Contact resistance between via and conductive line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11978773B2May 7, 2024
Formation method of semiconductor device structure with semiconductor nanostructures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11955552B2Apr 9, 2024
Semiconductor device with backside power rail and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901238B2Feb 13, 2024
Semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855144B2Dec 26, 2023
Source/drain metal contact and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11557484B2Jan 17, 2023
Contact structures with deposited silicide layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342229B2May 24, 2022
Method for forming a semiconductor device structure having an electrical connection structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11043558B2Jun 22, 2021
Source/drain metal contact and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12588242B2Mar 24, 2026
Field effect transistor with dual silicide and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59