Inventor
CHANG HSU-KAI
TW35 patents
⚠️ This page may combine multiple inventors who share the name “CHANG HSU-KAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
32 patentsUS11626494B2Apr 11, 2023
Epitaxial backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations85
US11563083B2Jan 24, 2023
Dual side contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12593469B2Mar 31, 2026
Dual side source/drain contact structures in semiconductor devices and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12588268B2Mar 24, 2026
Liner-free conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12451392B2Oct 21, 2025
Methods for seam repair and semiconductor structure manufactured thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12400962B2Aug 26, 2025
Liner-free conductive structures with anchor points
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12362234B2Jul 15, 2025
Contact structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148807B2Nov 19, 2024
Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12080766B2Sep 3, 2024
Epitaxial backside contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12057397B2Aug 6, 2024
Capping layer for liner-free conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046634B2Jul 23, 2024
Dual side contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040372B2Jul 16, 2024
Contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11929327B2Mar 12, 2024
Liner-free conductive structures with anchor points
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11837544B2Dec 5, 2023
Liner-free conductive structures with anchor points
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11810960B2Nov 7, 2023
Contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594609B2Feb 28, 2023
Liner-free conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11521929B2Dec 6, 2022
Capping layer for liner-free conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11489057B2Nov 1, 2022
Contact structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12068252B2Aug 20, 2024
Hybrid conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12002867B2Jun 4, 2024
Contact structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11581259B2Feb 14, 2023
Hybrid conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12433006B2Sep 30, 2025
Semiconductor device with conductive liners over silicide structures and method of making the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11894437B2Feb 6, 2024
Hybrid conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US11817384B2Nov 14, 2023
Interconnect structure and manufacturing method for the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11217524B1Jan 4, 2022
Interconnect structure and manufacturing method for the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US11767336B2Sep 26, 2023
Organometallic cluster photoresists for EUV lithography
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11579531B2Feb 14, 2023
Organometallic cluster photoresists for EUV lithography
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations58
US12457790B2Oct 28, 2025
Semiconductor device including conductive nitride feature and method of making the semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11424185B2Aug 23, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10880982B2Dec 29, 2020
Light generation system using metal-nonmetal compound as precursor and related light generation method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12489082B2Dec 2, 2025
Metal nanoparticles in an amorphous bonding layer between a device substrate and carrier substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12170331B2Dec 17, 2024
Conductive structures and methods of formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49