P

Inventor

CHANG CHENG-WEI

TW62 patents
⚠️ This page may combine multiple inventors who share the name “CHANG CHENG-WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

37 patents
US10685842B2Jun 16, 2020

Selective formation of titanium silicide and titanium nitride by hydrogen gas control

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10037918B2Jul 31, 2018

Contact structure and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US11462471B2Oct 4, 2022

Middle-of-line interconnect structure and manufacturing method

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations74
US11973124B2Apr 30, 2024

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11563083B2Jan 24, 2023

Dual side contact structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11232945B2Jan 25, 2022

Conductive feature formation and structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11652149B2May 16, 2023

Common rail contact

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US11295956B2Apr 5, 2022

Selective formation of titanium silicide and titanium nitride by hydrogen gas control

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11996333B2May 28, 2024

Source/drain EPI structure for improving contact quality

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532522B2Dec 20, 2022

Source/drain EPI structure for improving contact quality

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12593469B2Mar 31, 2026

Dual side source/drain contact structures in semiconductor devices and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12581689B2Mar 17, 2026

Multi-gate semiconductor device and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12557568B2Feb 17, 2026

Conductive feature formation and structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520545B2Jan 6, 2026

Semiconductor device with offset source/drain regions and methods of formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12400853B2Aug 26, 2025

Method of forming conductive feature including cleaning step

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349408B2Jul 1, 2025

Transistor gate contacts and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12334435B2Jun 17, 2025

Middle-of-line interconnect structure and manufacturing method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12170325B2Dec 17, 2024

Method of manufacturing a semiconductor device and a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12087575B2Sep 10, 2024

Conductive feature formation and structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046634B2Jul 23, 2024

Dual side contact structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009294B2Jun 11, 2024

Middle-of-line interconnect structure and manufacturing method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11955329B2Apr 9, 2024

Method of forming conductive feature including cleaning step

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670499B2Jun 6, 2023

Method of forming conductive feature including cleaning step

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12512324B2Dec 30, 2025

Selective formation of titanium silicide and titanium nitride by hydrogen gas control

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12300539B2May 13, 2025

Source/drain contact formation methods and devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12068252B2Aug 20, 2024

Hybrid conductive structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11972951B2Apr 30, 2024

Selective formation of titanium silicide and titanium nitride by hydrogen gas control

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11742240B2Aug 29, 2023

Source/drain contact formation methods and devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11581259B2Feb 14, 2023

Hybrid conductive structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11257712B2Feb 22, 2022

Source/drain contact formation methods and devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11894437B2Feb 6, 2024

Hybrid conductive structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US11282750B2Mar 22, 2022

Contact structure and method of fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12550364B2Feb 10, 2026

Semiconductor device structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12550413B2Feb 10, 2026

Plurality of semiconductor fin structures in p-type metal-oxide-semiconductor (MOS) region and n-type MOS region with a plurality of dielectric features in between and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12506079B2Dec 23, 2025

Semiconductor device with backside power rail and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12382693B2Aug 5, 2025

Semiconductor device and methods of formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10804097B2Oct 13, 2020

Conductive feature formation and structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

WISTRON CORP

4 patents

INNOLUX CORP

3 patents

FOXSEMICON INTEGRATED TECH INC

1 patent

WISTRON NEWEB CORP

1 patent

JOINWIN TECHNOLOGY CO LTD

1 patent

THAI DIENG IND CO LTD

1 patent

UNIV NAT TSING HUA

1 patent

CHANG CHENG-WEI

1 patent

Showing the top 50 of 62 patents by PatentIndex Score.