Inventor · disambiguated record
Brian J. Goolsby
Also filed as: GOOLSBY BRIAN · GOOLSBY BRIAN J
8 granted patents·1 pending application·90 citations·filing 2004–2007
86Inventor score
Top patents by PatentIndex Score
9 records- 0192US7091071B2Semiconductor fabrication process including recessed source/drain regions in an SOI waferFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 15, 2006·22 cites·20 claims
- 0290US7238561B2Method for forming uniaxially strained devicesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 3, 2007·25 cites·19 claims
- 0387US7265004B2Electronic devices including a semiconductor layer and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 4, 2007·15 cites·14 claims
- 0483US7821067B2Electronic devices including a semiconductor layerFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 26, 2010·11 cites·20 claims
- 0581US7361561B2Method of making a metal gate semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 22, 2008·10 cites·20 claims
- 0659US7208424B2Method of forming a semiconductor device having a metal layerFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Apr 24, 2007·6 cites·13 claims
- 0756US7566623B2Electronic device including a semiconductor fin having a plurality of gate electrodes and a process for forming the electronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jul 28, 2009·1 cites·20 claims
- 0838US7402476B2Method for forming an electronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jul 22, 2008·0 cites·20 claims
- 0934US2006030093A1Strained semiconductor devices and method for forming at least a portion thereofZHANG DA·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →