Inventor
SONSKY JAN
BE34 patents
⚠️ This page may combine multiple inventors who share the name “SONSKY JAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NXP BV
20 patentsUS7906388B2Mar 15, 2011
Semiconductor device and method for manufacture
NXP BV20 citations92
US9472549B2Oct 18, 2016
Cascoded semiconductor devices
NXP BV11 citations84
US7919364B2Apr 5, 2011
Semiconductor devices and methods of manufacture thereof
NXP BV16 citations84
US7808050B2Oct 5, 2010
Semiconductor device with relatively high breakdown voltage and manufacturing method
NXP BV10 citations84
US7671390B2Mar 2, 2010
Semiconductor device and method for manufacture
NXP BV11 citations84
US8853816B2Oct 7, 2014
Integrated circuits separated by through-wafer trench isolation
NXP BV5 citations82
US9793348B2Oct 17, 2017
Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the method
NXP BV2 citations73
US9171837B2Oct 27, 2015
Cascode circuit
NXP BV4 citations73
US7825011B2Nov 2, 2010
Method of manufacturing a semiconductor device and semiconductor device obtained by means of said method
NXP BV7 citations73
US9391187B2Jul 12, 2016
Semiconductor heterojunction device
NXP BV4 citations70
US7897478B2Mar 1, 2011
Semiconductor device with field plate and method
NXP BV6 citations63
US8373227B2Feb 12, 2013
Semiconductor device and method having trenches in a drain extension region
NXP BV4 citations62
US9177852B2Nov 3, 2015
Integrated circuits separated by through-wafer trench isolation
NXP BV2 citations60
US8962461B2Feb 24, 2015
GaN HEMTs and GaN diodes
NXP BV3 citations60
US7923345B2Apr 12, 2011
Methods relating to trench-based support structures for semiconductor devices
NXP BV3 citations60
US10134860B2Nov 20, 2018
Semiconductor device having a dielectric layer with different thicknesses and method for forming
NXP BV1 citations51
US9608514B2Mar 28, 2017
Diode circuit and power factor correction boost converter using the same
NXP BV0 citations51
US7956399B2Jun 7, 2011
Semiconductor device with low buried resistance and method of manufacturing such a device
NXP BV1 citations51
US9349819B2May 24, 2016
Heterojunction semiconductor device and manufacturing method
NXP BV0 citations49
US9064847B2Jun 23, 2015
Heterojunction semiconductor device with conductive barrier portion and manufacturing method
NXP BV0 citations47
Nexperia BV
7 patentsUS10050034B2Aug 14, 2018
Semiconductor device and associated methods
Nexperia BV3 citations73
US10388778B2Aug 20, 2019
Low resistance and leakage device
Nexperia BV2 citations72
US9917187B2Mar 13, 2018
Semiconductor device and manufacturing method
Nexperia BV2 citations71
US9929263B2Mar 27, 2018
Semiconductor device and method of making a semiconductor device
Nexperia BV1 citations50
US10403747B2Sep 3, 2019
Gallium nitride/ aluminum gallium nitride semiconductor device and method of making a gallium nitride/ aluminum gallium nitride semiconductor device
Nexperia BV0 citations40
US9941265B2Apr 10, 2018
Circuitry with voltage limiting and capactive enhancement
Nexperia BV0 citations38
US10157809B2Dec 18, 2018
Semiconductor device and method of making a semiconductor device with passivation layers providing tuned resistance
Nexperia BV0 citations37
SONSKY JAN
5 patentsUS9224634B2Dec 29, 2015
Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the method
SONSKY JAN7 citations83
US8247280B2Aug 21, 2012
Integration of low and high voltage CMOS devices
SONSKY JAN7 citations83
US8389392B2Mar 5, 2013
FinFET with separate gates and method for fabricating a finFET with separate gates
SONSKY JAN5 citations72
US8541267B2Sep 24, 2013
FinFET transistor with high-voltage capability and CMOS-compatible method for fabricating the same
SONSKY JAN4 citations61
US8390077B2Mar 5, 2013
Integration of low and high voltage CMOS devices
SONSKY JAN0 citations51