P

Inventor

CHANG MING-CHING

TW151 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MING-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

35 patents
US10325912B2Jun 18, 2019

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD19 citations94
US10269787B2Apr 23, 2019

Metal gate structure cutting process

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US11502076B2Nov 15, 2022

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US11114549B2Sep 7, 2021

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations85
US10535654B2Jan 14, 2020

Cut metal gate with slanted sidewalls

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations85
US10665457B2May 26, 2020

Method of forming an integrated circuit using a patterned mask layer

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10510894B2Dec 17, 2019

Isolation structure having different distances to adjacent FinFET devices

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10505014B2Dec 10, 2019

Vertical device having a protrusion source

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10468527B2Nov 5, 2019

Metal gate structure and methods of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10134604B1Nov 20, 2018

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9934971B2Apr 3, 2018

Method of forming an integrated circuit using a patterned mask layer

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9923079B2Mar 20, 2018

Composite dummy gate with conformal polysilicon layer for FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9640398B2May 2, 2017

Method of forming an integrated circuit using a patterned mask layer

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9460968B2Oct 4, 2016

Fin shape for fin field-effect transistors and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11916131B2Feb 27, 2024

Vertical device having a protrusion source

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11908746B2Feb 20, 2024

Semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11908920B2Feb 20, 2024

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11908903B2Feb 20, 2024

Process window control for gate formation in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855085B2Dec 26, 2023

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11721700B2Aug 8, 2023

Semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11721741B2Aug 8, 2023

Field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11527443B2Dec 13, 2022

Residue-free metal gate cutting for fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11462408B2Oct 4, 2022

Method of forming an integrated circuit using a patterned mask layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11309403B2Apr 19, 2022

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11056478B2Jul 6, 2021

Metal gate structure cutting process

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10867998B1Dec 15, 2020

Semiconductor structure cutting process and structures formed thereby

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10868139B2Dec 15, 2020

Controlling profiles of replacement gates

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10854728B2Dec 1, 2020

Vertical device having a protrusion structure

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658491B2May 19, 2020

Controlling profiles of replacement gates

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10515955B1Dec 24, 2019

Methods of manufacturing transistor gate structures by local thinning of dummy gate stacks using an etch barrier

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10460994B2Oct 29, 2019

Residue-free metal gate cutting for fin-like field effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10236220B1Mar 19, 2019

Fin field-effect transistor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9570319B2Feb 14, 2017

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9496372B2Nov 15, 2016

Method of making a FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11552195B2Jan 10, 2023

Semiconductor devices and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72

TAIWAN SEMICONDUCTOR MFG

9 patents

GEN ELECTRIC

2 patents

HUANG YUAN-SHENG

1 patent

YUNG SHIN PHARMA IND CO LTD

1 patent

LIN JR-JUNG

1 patent

Lin yu chao

1 patent

Showing the top 50 of 151 patents by PatentIndex Score.