Inventor
CHANG MING-CHING
TW151 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MING-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
35 patentsUS10325912B2Jun 18, 2019
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD19 citations94
US10269787B2Apr 23, 2019
Metal gate structure cutting process
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US11502076B2Nov 15, 2022
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US11114549B2Sep 7, 2021
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations85
US10535654B2Jan 14, 2020
Cut metal gate with slanted sidewalls
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations85
US10665457B2May 26, 2020
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10510894B2Dec 17, 2019
Isolation structure having different distances to adjacent FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10505014B2Dec 10, 2019
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10468527B2Nov 5, 2019
Metal gate structure and methods of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10134604B1Nov 20, 2018
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9934971B2Apr 3, 2018
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9923079B2Mar 20, 2018
Composite dummy gate with conformal polysilicon layer for FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9640398B2May 2, 2017
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9460968B2Oct 4, 2016
Fin shape for fin field-effect transistors and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11916131B2Feb 27, 2024
Vertical device having a protrusion source
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11908746B2Feb 20, 2024
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11908920B2Feb 20, 2024
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11908903B2Feb 20, 2024
Process window control for gate formation in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11855085B2Dec 26, 2023
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11721700B2Aug 8, 2023
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11721741B2Aug 8, 2023
Field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11527443B2Dec 13, 2022
Residue-free metal gate cutting for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11462408B2Oct 4, 2022
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11309403B2Apr 19, 2022
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11056478B2Jul 6, 2021
Metal gate structure cutting process
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10867998B1Dec 15, 2020
Semiconductor structure cutting process and structures formed thereby
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10868139B2Dec 15, 2020
Controlling profiles of replacement gates
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10854728B2Dec 1, 2020
Vertical device having a protrusion structure
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10658491B2May 19, 2020
Controlling profiles of replacement gates
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10515955B1Dec 24, 2019
Methods of manufacturing transistor gate structures by local thinning of dummy gate stacks using an etch barrier
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10460994B2Oct 29, 2019
Residue-free metal gate cutting for fin-like field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10236220B1Mar 19, 2019
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9570319B2Feb 14, 2017
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9496372B2Nov 15, 2016
Method of making a FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11552195B2Jan 10, 2023
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
TAIWAN SEMICONDUCTOR MFG
9 patentsUS9224833B2Dec 29, 2015
Method of forming a vertical device
TAIWAN SEMICONDUCTOR MFG33 citations98
US7989355B2Aug 2, 2011
Method of pitch halving
TAIWAN SEMICONDUCTOR MFG58 citations98
US6794313B1Sep 21, 2004
Oxidation process to improve polysilicon sidewall roughness
TAIWAN SEMICONDUCTOR MFG115 citations98
US9245883B1Jan 26, 2016
Method of making a FinFET device
TAIWAN SEMICONDUCTOR MFG30 citations94
US9041125B2May 26, 2015
Fin shape for fin field-effect transistors and method of forming
TAIWAN SEMICONDUCTOR MFG17 citations93
US6794302B1Sep 21, 2004
Dynamic feed forward temperature control to achieve CD etching uniformity
TAIWAN SEMICONDUCTOR MFG21 citations90
US8053323B1Nov 8, 2011
Patterning methodology for uniformity control
TAIWAN SEMICONDUCTOR MFG15 citations84
US9337195B2May 10, 2016
Semiconductor devices and methods of manufacture thereof
TAIWAN SEMICONDUCTOR MFG11 citations82
US7109085B2Sep 19, 2006
Etching process to avoid polysilicon notching
TAIWAN SEMICONDUCTOR MFG10 citations74
GEN ELECTRIC
2 patentsHUANG YUAN-SHENG
1 patentYUNG SHIN PHARMA IND CO LTD
1 patentLIN JR-JUNG
1 patentLin yu chao
1 patentShowing the top 50 of 151 patents by PatentIndex Score.