P

Inventor

HA SEUNG SEOK

KR16 patents
⚠️ This page may combine multiple inventors who share the name “HA SEUNG SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

15 patents
US10825809B2Nov 3, 2020

Semiconductor device having gate isolation layer

SAMSUNG ELECTRONICS CO LTD4 citations82
US10566326B2Feb 18, 2020

Semiconductor devices including a device isolation region in a substrate and/or fin

SAMSUNG ELECTRONICS CO LTD7 citations82
US9741854B2Aug 22, 2017

Method for manufacturing semiconductor device

SAMSUNG ELECTRONICS CO LTD16 citations82
US11387345B2Jul 12, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD3 citations72
US10937887B2Mar 2, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations72
US9679991B2Jun 13, 2017

Method for manufacturing semiconductor device using gate portion as etch mask

SAMSUNG ELECTRONICS CO LTD6 citations72
US11929367B2Mar 12, 2024

Semiconductor device having gate isolation layer

SAMSUNG ELECTRONICS CO LTD2 citations71
US11488953B2Nov 1, 2022

Semiconductor device having gate isolation layer

SAMSUNG ELECTRONICS CO LTD3 citations71
US10916534B2Feb 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations71
US12249648B2Mar 11, 2025

Semiconductor device having spacer between contract patterns

SAMSUNG ELECTRONICS CO LTD0 citations62
US12107139B2Oct 1, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11799013B2Oct 24, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11380791B2Jul 5, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US10256318B2Apr 9, 2019

Method of manufacturing semiconductor device to prevent defects

SAMSUNG ELECTRONICS CO LTD1 citations62
US12238941B2Feb 25, 2025

Semiconductor device having gate isolation layer

SAMSUNG ELECTRONICS CO LTD0 citations61

PARK SANG-JINE

1 patent