P

Inventor

CHEN SHU-HAN

TW29 patents
⚠️ This page may combine multiple inventors who share the name “CHEN SHU-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

23 patents
US9773889B2Sep 26, 2017

Method of semiconductor arrangement formation

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10263097B2Apr 16, 2019

Method of semiconductor arrangement formation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11430865B2Aug 30, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11069531B2Jul 20, 2021

Replacement gate methods that include treating spacers to widen gate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11177368B2Nov 16, 2021

Semiconductor arrangement

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12456623B2Oct 28, 2025

Replacement gate methods that include treating spacers to widen gate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12444608B2Oct 14, 2025

Structure having gate spacers with projecting portions extending into a gate dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12336248B2Jun 17, 2025

Non-conformal gate oxide formation on FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12278267B2Apr 15, 2025

Semiconductor devices having funnel-shaped gate structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11990509B2May 21, 2024

Semiconductor devices having gate structures with slanted sidewalls

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11908695B2Feb 20, 2024

Replacement gate methods that include treating spacers to widen gate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11398384B2Jul 26, 2022

Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12376344B2Jul 29, 2025

Semiconductor device comprising channel layers with different thicknesses

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12218197B2Feb 4, 2025

Gate oxide of nanostructure transistor with increased corner thickness

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11942556B2Mar 26, 2024

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11855140B2Dec 26, 2023

Gate oxide of nanostructure transistor with increased corner thickness

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12506007B2Dec 23, 2025

Method of manufacturing semiconductor devices and semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations54
US12593464B2Mar 31, 2026

Dielectric layer for nanosheet protection and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10026641B2Jul 17, 2018

Isolation structure of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9786543B2Oct 10, 2017

Isolation structure of semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12563797B2Feb 24, 2026

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12310074B2May 20, 2025

NanoStructure field-effect transistor device and methods of forming

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10365672B2Jul 30, 2019

Method and system for monitoring temperature of wafer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations35

Chen shu han

2 patents

TAIWAN SEMICONDUCTOR MFG

1 patent

UNIV NAT CENTRAL

1 patent

CHEN SHU-HAN

1 patent

ABILITY OPTO ELECTRONICS TECHNOLOGY CO LTD

1 patent