Inventor
CHEN SHU-HAN
TW29 patents
⚠️ This page may combine multiple inventors who share the name “CHEN SHU-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
23 patentsUS9773889B2Sep 26, 2017
Method of semiconductor arrangement formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10263097B2Apr 16, 2019
Method of semiconductor arrangement formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11430865B2Aug 30, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11069531B2Jul 20, 2021
Replacement gate methods that include treating spacers to widen gate
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11177368B2Nov 16, 2021
Semiconductor arrangement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12456623B2Oct 28, 2025
Replacement gate methods that include treating spacers to widen gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12444608B2Oct 14, 2025
Structure having gate spacers with projecting portions extending into a gate dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12336248B2Jun 17, 2025
Non-conformal gate oxide formation on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12278267B2Apr 15, 2025
Semiconductor devices having funnel-shaped gate structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11990509B2May 21, 2024
Semiconductor devices having gate structures with slanted sidewalls
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11908695B2Feb 20, 2024
Replacement gate methods that include treating spacers to widen gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11398384B2Jul 26, 2022
Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12376344B2Jul 29, 2025
Semiconductor device comprising channel layers with different thicknesses
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12218197B2Feb 4, 2025
Gate oxide of nanostructure transistor with increased corner thickness
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11942556B2Mar 26, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11855140B2Dec 26, 2023
Gate oxide of nanostructure transistor with increased corner thickness
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12506007B2Dec 23, 2025
Method of manufacturing semiconductor devices and semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations54
US12593464B2Mar 31, 2026
Dielectric layer for nanosheet protection and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10026641B2Jul 17, 2018
Isolation structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9786543B2Oct 10, 2017
Isolation structure of semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12563797B2Feb 24, 2026
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12310074B2May 20, 2025
NanoStructure field-effect transistor device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10365672B2Jul 30, 2019
Method and system for monitoring temperature of wafer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations35