Inventor
CHEN CHUN-HENG
TW34 patents
⚠️ This page may combine multiple inventors who share the name “CHEN CHUN-HENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
27 patentsUS12046660B2Jul 23, 2024
Non-conformal capping layer and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11640977B2May 2, 2023
Non-conformal oxide liner and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11469229B2Oct 11, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11437491B2Sep 6, 2022
Non-conformal capping layer and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11430865B2Aug 30, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10784359B2Sep 22, 2020
Non-conformal oxide liner and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9837504B2Dec 5, 2017
Method of modifying capping layer in semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12501697B2Dec 16, 2025
Methods of forming semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336211B2Jun 17, 2025
Dielectric layer on semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199158B2Jan 14, 2025
Non-conformal oxide liner and manufacturing methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12015031B2Jun 18, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855095B2Dec 26, 2023
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11296084B2Apr 5, 2022
Deposition method, semiconductor device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12336248B2Jun 17, 2025
Non-conformal gate oxide formation on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12278267B2Apr 15, 2025
Semiconductor devices having funnel-shaped gate structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11990509B2May 21, 2024
Semiconductor devices having gate structures with slanted sidewalls
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12376344B2Jul 29, 2025
Semiconductor device comprising channel layers with different thicknesses
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12218197B2Feb 4, 2025
Gate oxide of nanostructure transistor with increased corner thickness
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11942556B2Mar 26, 2024
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11855140B2Dec 26, 2023
Gate oxide of nanostructure transistor with increased corner thickness
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12563797B2Feb 24, 2026
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12310074B2May 20, 2025
NanoStructure field-effect transistor device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US11532718B2Dec 20, 2022
FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the fins
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10879061B2Dec 29, 2020
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10181397B2Jan 15, 2019
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10269900B2Apr 23, 2019
Semiconductor film with adhesion layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
US9660023B2May 23, 2017
Semiconductor film with adhesion layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48