Inventor
FUKUSHIMA TOSHITAKA
JP35 patents
⚠️ This page may combine multiple inventors who share the name “FUKUSHIMA TOSHITAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
24 patentsUS4922319AMay 1, 1990
Semiconductor programmable memory device
FUJITSU LTD143 citations98
US4907062AMar 6, 1990
Semiconductor wafer-scale integrated device composed of interconnected multiple chips each having an integration circuit chip formed thereon
FUJITSU LTD83 citations96
US4866004ASep 12, 1989
Method of forming groove isolation filled with dielectric for semiconductor device
FUJITSU LTD43 citations92
US4459694AJul 10, 1984
Field programmable device with circuitry for detecting poor insulation between adjacent word lines
FUJITSU LTD23 citations82
US4287569ASep 1, 1981
Semiconductor memory device
FUJITSU LTD28 citations82
US4862459AAug 29, 1989
Test method for detecting faulty memory cell of a programmable device
FUJITSU LTD9 citations74
US4808550AFeb 28, 1989
Method of producing isolation groove structure
FUJITSU LTD16 citations74
US4654688AMar 31, 1987
Semiconductor device having a transistor with increased current amplification factor
FUJITSU LTD15 citations74
US4322640AMar 30, 1982
Three-state output circuit
FUJITSU LTD13 citations74
US4320411AMar 16, 1982
Integrated circuit with double dielectric isolation walls
FUJITSU LTD17 citations74
US4617653AOct 14, 1986
Semiconductor memory device utilizing multi-stage decoding
FUJITSU LTD8 citations73
US4482914ANov 13, 1984
Contact structure of semiconductor device
FUJITSU LTD8 citations73
US4429388AJan 31, 1984
Field programmable device with internal dynamic test circuit
FUJITSU LTD18 citations73
US4376984AMar 15, 1983
Programmable read-only memory device
FUJITSU LTD10 citations73
US4320507AMar 16, 1982
Field programmable device having test provisions for fault detection
FUJITSU LTD18 citations73
US4498022AFeb 5, 1985
Tristate output buffer with high-impedance state responsive to increase in power supply voltage
FUJITSU LTD13 citations72
US4347584AAug 31, 1982
Programmable read-only memory device
FUJITSU LTD9 citations72
US4319341AMar 9, 1982
Programming circuit for permanently storing data in a programmable read only memory
FUJITSU LTD15 citations72
US4943742AJul 24, 1990
Schottky barrier diode clamp transistor
FUJITSU LTD4 citations63
US4792833ADec 20, 1988
Junction-shorting type semiconductor read-only memory having increased speed and increased integration density
FUJITSU LTD4 citations63
US4468856ASep 4, 1984
Method for forming an ohmic contact to a semiconductor substrate
FUJITSU LTD2 citations63
US4466012AAug 14, 1984
Semiconductor device with deep oxide isolation
FUJITSU LTD2 citations63
US4424582AJan 3, 1984
Semiconductor memory device
FUJITSU LTD6 citations61
US4805141AFeb 14, 1989
Bipolar PROM having transistors with reduced base widths
FUJITSU LTD0 citations52
SEIKO INSTR INC
4 patentsUS9036455B2May 19, 2015
Electronic timepiece
SEIKO INSTR INC5 citations73
US5187720AFeb 16, 1993
Synchronous serial communication circuit
SEIKO INSTR INC15 citations73
US9092015B2Jul 28, 2015
Electronic timepiece
SEIKO INSTR INC1 citations52
US5187441AFeb 16, 1993
Portable information apparatus for sensing battery voltage drop
SEIKO INSTR INC1 citations51
SEIKO INSTR & ELECTRONICS
3 patentsUS4839854AJun 13, 1989
Data collection system having stationary unit with electromagnetic induction circuitry for bidirectionally relaying data
SEIKO INSTR & ELECTRONICS51 citations87
US4635645AJan 13, 1987
Electronic sphygmomanometer
SEIKO INSTR & ELECTRONICS9 citations74
US4607641AAug 26, 1986
Electronic sphygmomanometer
SEIKO INSTR & ELECTRONICS9 citations74