Inventor
PALLE DHARMENDAR REDDY
US12 patents
⚠️ This page may combine multiple inventors who share the name “PALLE DHARMENDAR REDDY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
10 patentsUS9287357B2Mar 15, 2016
Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD66 citations97
US9647098B2May 9, 2017
Thermionically-overdriven tunnel FETs and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD42 citations93
US9905672B2Feb 27, 2018
Method of forming internal dielectric spacers for horizontal nanosheet FET architectures
SAMSUNG ELECTRONICS CO LTD14 citations84
US9773886B1Sep 26, 2017
Nanosheet and nanowire devices having doped internal spacers and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD14 citations84
US9978833B2May 22, 2018
Methods for varied strain on nano-scale field effect transistor devices
SAMSUNG ELECTRONICS CO LTD5 citations73
US10181527B2Jan 15, 2019
FinFet having dual vertical spacer and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US9871139B2Jan 16, 2018
Sacrificial epitaxial gate stressors
SAMSUNG ELECTRONICS CO LTD1 citations52
US9431492B2Aug 30, 2016
Integrated circuit devices including contacts and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9425275B2Aug 23, 2016
Integrated circuit chips having field effect transistors with different gate designs
SAMSUNG ELECTRONICS CO LTD0 citations52
US10205025B2Feb 12, 2019
Methods to achieve strained channel finFET devices
SAMSUNG ELECTRONICS CO LTD0 citations41