Inventor

JOSHI RAVI KESHAV

AT27 patents

⚠️ This page may combine multiple inventors who share the name “JOSHI RAVI KESHAV”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JOSHI RAVI KESHAV

INFINEON TECHNOLOGIES AG

Lithium ion battery, integrated circuit and method of manufacturing a lithium ion battery

Method of manufacturing ohmic contacts on a silicon carbide (SIC) substrate, method of manufacturing a semiconductor device, and semiconductor device

Method of manufacturing semiconductor device with silicon carbide body

Silicon carbide device and method for forming a silicon carbide device

Semiconductor device with silicon carbide body

Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure

Semiconductor device and method for forming a semiconductor device

Semiconductor device and method for forming a semiconductor device

Silicon carbide device with metallic interface layers and method of manufacturing

SiC device with buried doped region

Method of manufacturing semiconductor devices with transistor cells and semiconductor device

Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

Battery, integrated circuit and method of manufacturing a battery

Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

Intermediate layer for copper structuring and methods of formation thereof

Self aligned silicon carbide contact formation using protective layer

Self aligned silicon carbide contact formation using protective layer

INFINEON TECHNOLOGIES AUSTRIA AG

Oxygen inserted Si-layers in vertical trench power devices

Method of forming oxygen inserted Si-layers in power semiconductor devices

Vertical trench power devices with oxygen inserted Si-layers

Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices

Superjunction device with oxygen inserted Si-layers

Method of manufacturing a semiconductor device having a power metallization structure

Passivation structuring and plating for semiconductor devices

Semiconductor device with superjunction and oxygen inserted Si-layers

Power metallization structure for semiconductor devices

Forming recombination centers in a semiconductor device