Inventor
YOO HYUN SEUNG
KR23 patents
⚠️ This page may combine multiple inventors who share the name “YOO HYUN SEUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
11 patentsUS9466376B1Oct 11, 2016
Semiconductor memory device and operating method thereof
SK HYNIX INC13 citations84
US9099527B2Aug 4, 2015
Non-volatile memory device and method of manufacturing the same
SK HYNIX INC10 citations84
US9384841B2Jul 5, 2016
Semiconductor device, semiconductor system having the same and operating method thereof
SK HYNIX INC6 citations73
US9373402B2Jun 21, 2016
Semiconductor memory device including a dummy memory cell and method of programming the same
SK HYNIX INC5 citations73
US9368219B1Jun 14, 2016
Nonvolatile memory device and operating method thereof
SK HYNIX INC3 citations73
US9293208B2Mar 22, 2016
Semiconductor memory apparatus and method for reading data from the same
SK HYNIX INC4 citations72
US9508444B2Nov 29, 2016
3D non-volatile memory device and method for operating and fabricating the same
SK HYNIX INC2 citations63
US9286988B2Mar 15, 2016
Nonvolatile memory device and operating method thereof
SK HYNIX INC1 citations63
US12518837B2Jan 6, 2026
Memory device including precharge voltage control and method of operating the memory device
SK HYNIX INC0 citations60
US9362299B2Jun 7, 2016
Method of fabricating a nonvolatile memory device with a vertical semiconductor pattern between vertical source lines
SK HYNIX INC1 citations52
US9286983B2Mar 15, 2016
Memory string and semiconductor device including the same
SK HYNIX INC0 citations51
YOO HYUN-SEUNG
4 patentsUS8730727B2May 20, 2014
3D non-volatile memory device and method for operating and fabricating the same
YOO HYUN-SEUNG10 citations83
US8637913B2Jan 28, 2014
Nonvolatile memory device and method for fabricating the same
YOO HYUN-SEUNG9 citations83
US8912053B2Dec 16, 2014
Non-volatile memory device and method for fabricating the same
YOO HYUN-SEUNG2 citations61
US8675404B2Mar 18, 2014
Reading method of non-volatile memory device
YOO HYUN-SEUNG1 citations50