Inventor
LIN JENGPING
TW15 patents
⚠️ This page may combine multiple inventors who share the name “LIN JENGPING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
12 patentsUS5502009AMar 26, 1996
Method for fabricating gate oxide layers of different thicknesses
UNITED MICROELECTRONICS CORP116 citations97
US5510279AApr 23, 1996
Method of fabricating an asymmetric lightly doped drain transistor device
UNITED MICROELECTRONICS CORP75 citations96
US5663586ASep 2, 1997
Fet device with double spacer
UNITED MICROELECTRONICS CORP44 citations95
US5641698AJun 24, 1997
Method of fabricating FET device with double spacer
UNITED MICROELECTRONICS CORP30 citations92
US5547900AAug 20, 1996
Method of fabricating a self-aligned contact using a liquid-phase oxide-deposition process
UNITED MICROELECTRONICS CORP19 citations92
US5504038AApr 2, 1996
Method for selective tungsten sidewall and bottom contact formation
UNITED MICROELECTRONICS CORP42 citations92
US5612239AMar 18, 1997
Use of oxide spacers formed by liquid phase deposition
UNITED MICROELECTRONICS CORP18 citations84
US5679602AOct 21, 1997
Method of forming MOSFET devices with heavily doped local channel stops
UNITED MICROELECTRONICS CORP17 citations74
US6107175AAug 22, 2000
Method of fabricating self-aligned contact
UNITED MICROELECTRONICS CORP12 citations73
US5550074AAug 27, 1996
Process for fabricating MOS transistors having anti-punchthrough implant regions formed by the use of a phase-shift mask
UNITED MICROELECTRONICS CORP7 citations73
US5652160AJul 29, 1997
Method of fabricating a buried contact structure with WSix sidewall spacers
UNITED MICROELECTRONICS CORP5 citations63
US5966604AOct 12, 1999
Method of manufacturing MOS components having lightly doped drain structures
UNITED MICROELECTRONICS CORP3 citations62