Inventor
OWADA FUKUO
JP22 patents
⚠️ This page may combine multiple inventors who share the name “OWADA FUKUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FLOADIA CORP
8 patentsUS11011530B2May 18, 2021
Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device
FLOADIA CORP2 citations73
US10074660B2Sep 11, 2018
Semiconductor memory device
FLOADIA CORP3 citations71
US12598743B2Apr 7, 2026
Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device
FLOADIA CORP0 citations62
US10381446B2Aug 13, 2019
Memory cell and non-volatile semiconductor storage device
FLOADIA CORP1 citations62
US10276727B2Apr 30, 2019
Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device
FLOADIA CORP1 citations62
US10615168B2Apr 7, 2020
Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device
FLOADIA CORP0 citations52
US10431589B2Oct 1, 2019
Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device
FLOADIA CORP0 citations52
US10373967B2Aug 6, 2019
Memory cell, nonvolatile semiconductor storage device, and method for manufacturing nonvolatile semiconductor storage device
FLOADIA CORP0 citations52
RENESAS ELECTRONICS CORP
6 patentsUS9183914B2Nov 10, 2015
Semiconductor memory device
RENESAS ELECTRONICS CORP10 citations83
US9947679B2Apr 17, 2018
Method of manufacturing semiconductor device with separately formed insulating films in main circuit and memory regions
RENESAS ELECTRONICS CORP4 citations73
US9293604B2Mar 22, 2016
Semiconductor device and method of manufacturing same
RENESAS ELECTRONICS CORP3 citations72
US9508554B2Nov 29, 2016
Method of manufacturing semiconductor device
RENESAS ELECTRONICS CORP2 citations62
US9685453B2Jun 20, 2017
Method of manufacturing a nonvolatile memory cell and a field effect transistor
RENESAS ELECTRONICS CORP1 citations51
US9406813B2Aug 2, 2016
Semiconductor device and method of manufacturing same
RENESAS ELECTRONICS CORP0 citations51
RENESAS TECH CORP
4 patentsUS7663179B2Feb 16, 2010
Semiconductor device with rewritable nonvolatile memory cell
RENESAS TECH CORP14 citations84
US7348245B2Mar 25, 2008
Semiconductor device and a method of manufacturing the same
RENESAS TECH CORP10 citations84
US7118972B2Oct 10, 2006
Method of manufacture of a semiconductor device
RENESAS TECH CORP9 citations74
US6803644B2Oct 12, 2004
Semiconductor integrated circuit device and method of manufacturing the same
RENESAS TECH CORP5 citations62
HITACHI LTD
3 patentsUS6420754B2Jul 16, 2002
Semiconductor integrated circuit device
HITACHI LTD72 citations95
US6423584B2Jul 23, 2002
method for forming capacitors and field effect transistors in a semiconductor integrated circuit device
HITACHI LTD33 citations92
US7064090B2Jun 20, 2006
Method of manufacturing a semiconductor integrated circuit device
HITACHI LTD4 citations62