Inventor

KANG LAEGU

US19 patents

⚠️ This page may combine multiple inventors who share the name “KANG LAEGU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG LAEGU

GLOBALFOUNDRIES INC

Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device

Blanket EPI super steep retrograde well formation without Si recess

Transistor device structures with retrograde wells in CMOS applications

Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures

Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures

Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device

FREESCALE SEMICONDUCTOR INC

Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer

Vertical diode formation in SOI application

Integration of multiple gate dielectrics by surface protection

Area diode formation in SOI application

Forming a semiconductor device having epitaxially grown source and drain regions

MOTOROLA INC

Body-tied silicon on insulator semiconductor device and method therefor

Method of forming body-tied silicon on insulator semiconductor device

CHEN XIANGDONG

High pressure deuterium treatment for semiconductor/high-K insulator interface

Balancing NFET and PFET performance using straining layers

LIU YANXIANG

Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currents

SAMSUNG ELECTRONICS CO LTD

Method of manufacturing DRAM cell

KANG LAEGU

Blanket EPI super steep retrograde well formation without Si recess

JEONG YONG-KUK

Methods of forming CMOS transistors using tensile stress layers and hydrogen plasma treatment