Inventor
GANZ MICHAEL
US8 patents
Patents
8 patentsUS9306036B2Apr 5, 2016
Nitride spacer for protecting a fin-shaped field effect transistor (finFET) device
GLOBALFOUNDRIES INC5 citations80
US9812336B2Nov 7, 2017
FinFET semiconductor structures and methods of fabricating same
GLOBALFOUNDRIES INC2 citations69
US9362357B2Jun 7, 2016
Blanket EPI super steep retrograde well formation without Si recess
GLOBALFOUNDRIES INC0 citations50
US10483172B2Nov 19, 2019
Transistor device structures with retrograde wells in CMOS applications
GLOBALFOUNDRIES INC0 citations49
US9852954B2Dec 26, 2017
Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
GLOBALFOUNDRIES INC0 citations49
US9209181B2Dec 8, 2015
Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
GLOBALFOUNDRIES INC0 citations49
US10096488B2Oct 9, 2018
FinFET semiconductor structures and methods of fabricating same
GLOBALFOUNDRIES INC0 citations48
US9978588B2May 22, 2018
Nitride spacer for protecting a fin-shaped field effect transistor (FinFET) device
GLOBALFOUNDRIES INC0 citations48