Inventor
SAMAVEDAM SRIKANTH BALAJI
US15 patents
⚠️ This page may combine multiple inventors who share the name “SAMAVEDAM SRIKANTH BALAJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
11 patentsUS9576952B2Feb 21, 2017
Integrated circuits with varying gate structures and fabrication methods
GLOBALFOUNDRIES INC421 citations98
US9362180B2Jun 7, 2016
Integrated circuit having multiple threshold voltages
GLOBALFOUNDRIES INC425 citations98
US9455201B2Sep 27, 2016
Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits
GLOBALFOUNDRIES INC18 citations83
US10644157B2May 5, 2020
Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methods
GLOBALFOUNDRIES INC2 citations73
US9935112B1Apr 3, 2018
SRAM cell having dual pass gate transistors and method of making the same
GLOBALFOUNDRIES INC3 citations72
US9508743B2Nov 29, 2016
Dual three-dimensional and RF semiconductor devices using local SOI
GLOBALFOUNDRIES INC2 citations62
US10347748B2Jul 9, 2019
Methods of forming source/drain regions on FinFET devices
GLOBALFOUNDRIES INC1 citations61
US9966313B2May 8, 2018
FinFET device and method of manufacturing
GLOBALFOUNDRIES INC0 citations51
US10483172B2Nov 19, 2019
Transistor device structures with retrograde wells in CMOS applications
GLOBALFOUNDRIES INC0 citations49
US9852954B2Dec 26, 2017
Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
GLOBALFOUNDRIES INC0 citations49
US9209181B2Dec 8, 2015
Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures
GLOBALFOUNDRIES INC0 citations49
GLOBALFOUNDRIES US INC
3 patentsUS11127818B2Sep 21, 2021
High voltage transistor with fin source/drain regions and trench gate structure
GLOBALFOUNDRIES US INC0 citations62
US11462648B2Oct 4, 2022
Fin-based Schottky diode for integrated circuit (IC) products and methods of making such a Schottky diode
GLOBALFOUNDRIES US INC0 citations51
US11195947B2Dec 7, 2021
Semiconductor device with doped region adjacent isolation structure in extension region
GLOBALFOUNDRIES US INC0 citations47