Inventor
GEIPEL JR HENRY J
11 patents
Patents
11 patentsUS4369072AJan 18, 1983
Method for forming IGFET devices having improved drain voltage characteristics
IBM43 citations89
US4282646AAug 11, 1981
Method of making a transistor array
IBM29 citations89
US4622573ANov 11, 1986
CMOS contacting structure having degeneratively doped regions for the prevention of latch-up
IBM25 citations81
US4480375ANov 6, 1984
Simple process for making complementary transistors
IBM26 citations81
US4398341AAug 16, 1983
Method of fabricating a highly conductive structure
IBM23 citations81
US4389257AJun 21, 1983
Fabrication method for high conductivity, void-free polysilicon-silicide integrated circuit electrodes
IBM27 citations81
US4329773AMay 18, 1982
Method of making low leakage shallow junction IGFET devices
IBM22 citations75
US4470191ASep 11, 1984
Process for making complementary transistors by sequential implantations using oxidation barrier masking layer
IBM12 citations73
US4462151AJul 31, 1984
Method of making high density complementary transistors
IBM14 citations71
US4527325AJul 9, 1985
Process for fabricating semiconductor devices utilizing a protective film during high temperature annealing
IBM14 citations68
US4631219ADec 23, 1986
Growth of bird's beak free semi-rox
IBM5 citations62